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Vishay P-Channel Enhancement MOSFET, 8 A, 60 V, 8-Pin PowerPAK 1212-8 SI7309DN-T1-E3
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 1.04mm |
| Length | 3.05mm |
| Model | SI7309DN-T1-E3 |
| Width | 3.05mm |
| Mount Type | Surface |
| Series | Si7309DN |
| Maximum Operating Temperature | 150°C |
| Package Type | PowerPAK 1212-8 |
| Minimum Operating Temperature | -65°C |
| Standards/Approvals | IEC 61249-2-21 |
| Pin Count | 8 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 8A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 0.115Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 19.8W |
| Typical Gate Charge Qg @ Vgs | 14.5nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.2V |
Key Features
- Maximum continuous drain current of 8 amperes supports demanding current loads.
- Maximum drain-source voltage rating of 60 volts ensures robust operation.
- Features an 8-pin PowerPAK 1212-8 surface mount package for compact PCB designs.
- Enhancement mode operation with low maximum drain-source resistance of 0.115 ohms for improved efficiency.
- Maximum power dissipation capacity of 19.8 watts for reliable thermal performance.
- Operates reliably over a temperature range from -65°C to 150°C.
- Typical gate charge of 14.5 nanocoulombs at specified gate voltage enables fast switching.
- Designed according to IEC 61249-2-21 standards ensuring quality and performance.
Product Description
The Vishay SI7309DN-T1-E3 is a P-Channel MOSFET transistor designed for power management and switching applications in electronic circuits. It operates in enhancement mode and is housed in a compact 8-pin PowerPAK 1212-8 surface mount package, making it suitable for dense PCB designs and industrial use cases.
It supports a maximum continuous drain current of 8 amperes and a maximum drain-to-source voltage of 60 volts, making it ideal for controlling moderate power loads efficiently. Its maximum drain-source resistance of 0.115 ohms minimizes conduction losses, contributing to improved energy efficiency in power electronic devices.
Thermally, the component can dissipate up to 19.8 watts, ensuring reliable operation under heavy electrical load. It can operate across a wide temperature range from -65°C to 150°C, allowing use in harsh industrial and manufacturing environments.
The typical gate charge of 14.5 nanocoulombs enables fast switching speeds, reducing switching losses and optimizing circuit performance. The maximum gate-source voltage rating of ±20 volts provides protection and tolerance to gate voltage fluctuations.
With compliance to IEC 61249-2-21 standards, this MOSFET meets industry norms for reliability and safety. Originating from China, it is a trusted semiconductor component suitable for use in power supplies, motor drives, and other commercial electronic equipment.
Maximum continuous drain current of 8 amperes supports demanding current loads. Maximum drain-source voltage rating of 60 volts ensures robust operation. 8-pin PowerPAK 1212-8 surface mount package fits compact applications.
Enhancement mode with low Rds(on) resistance of 0.115 ohms improves efficiency. Maximum power dissipation up to 19.8 watts for reliable thermal handling. Operating temperature range from -65°C to 150°C suits harsh environments.
Typical gate charge of 14.5 nC enables fast switching performance. Compliance with IEC 61249-2-21 standards ensures quality.
This Vishay MOSFET is widely used in industrial, manufacturing, and electronic component applications. Explore more semiconductors and power MOSFETs available on EnvMart to meet your design and production requirements.
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Frequently Asked Questions
The maximum continuous drain current for this model is 8 amperes, which supports demanding current loads.
It has a maximum drain-source voltage rating of 60 volts, ensuring robust operation in various applications.
This model is housed in an 8-pin PowerPAK 1212-8 surface mount package, suitable for compact PCB designs.
The maximum power dissipation capacity is 19.8 watts, allowing for reliable thermal performance under load.
The typical gate charge is 14.5 nanocoulombs at the specified gate voltage, enabling fast switching speeds.
The dimensions of this model are 3.05 mm in length, 3.05 mm in width, and 1.04 mm in height.
The maximum gate-source voltage rating is ±20 volts, providing protection against gate voltage fluctuations.
It is designed according to IEC 61249-2-21 standards, ensuring quality and performance in its applications.
This model features a P-channel type, operating in enhancement mode for efficient power management.
The maximum drain-source resistance is 0.115 ohms, which helps minimize conduction losses and improve efficiency.
This MOSFET is suitable for power management and switching applications in electronic circuits, including power supplies and motor drives.
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