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DiodesZetex Small Signal Dual NPN+PNP Transistor 600 mA 40 V 6-Pin SOT-363 MMDT4413-7-F

Category Bipolar Transistors Brand DiodesZetex Condition New

Specifications

Country of Origin China
Brand DiodesZetex
Height 1.1mm
Length 2.2mm
Model MMDT4413-7-F
Width 2.2mm
Mount Type Surface
Series MMDT
Maximum Operating Temperature 150°C
Package Type SOT-363
Minimum Operating Temperature -65°C
Pin Count 6
Maximum Collector Emitter Voltage Vceo 40V
Minimum DC Current Gain hFE 20
Transistor Polarity NPN + PNP
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 60V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 200mW
Maximum DC Collector Current Idc 600mA
Transistor Configuration Isolated
Maximum Transition Frequency ft 250MHz

Key Features

  • Maximum DC collector current of 600 mA ensures robust performance.
  • Collector-emitter voltage rating up to 40 volts for safe operation.
  • Compact 6-pin SOT-363 surface mount package provides space-saving on PCB layouts.
  • Supports high transition frequency up to 250 MHz for fast switching.
  • Operating temperature range from -65°C to 150°C suitable for diverse environments.
  • Low power dissipation of 200 mW enhances efficiency in electronic circuits.
  • Isolated transistor configuration with both NPN and PNP polarities included.
  • Meets automotive standard AEC-Q101 ensuring reliability in automotive electronics.

Product Description

DiodesZetex MMDT4413-7-F is a high-quality small signal transistor incorporating dual NPN and PNP types within a single 6-pin SOT-363 package. It features a maximum DC collector current of 600 mA and a collector-emitter voltage rating of 40 V, making it suitable for compact, efficient electronic circuit designs.

This device is surface mounted to optimize space on printed circuit boards and provides a high transition frequency of 250 MHz, catering to high-speed switching requirements commonly found in communication and control systems.

The transistor maintains reliable operation across a wide temperature range, from -65°C to 150°C, and dissipates a maximum power of 200 mW, ensuring stable performance in demanding industrial and automotive environments. Its isolated transistor configuration supports both NPN and PNP polarities, expanding versatility in circuit designs.

Manufactured in China, this transistor complies with the automotive standard AEC-Q101, confirming its suitability for automotive electronics applications. Maximum DC collector current of 600 mA. Collector-emitter voltage up to 40 V.

Compact 6-pin SOT-363 surface mount package. High transition frequency of 250 MHz. Wide operating temperature from -65°C to 150°C. Power dissipation rating of 200 mW. Isolated dual NPN and PNP transistor configuration. Automotive standard AEC-Q101 compliant.

This transistor is ideal for use in industrial, automotive, and general electronics applications requiring reliable small signal switching performance within compact spaces. Explore more components in the Bipolar Transistors category on EnvMart for related solutions.

DiodesZetex Small Signal Dual NPN+PNP Transistor 600 mA 40 V 6-Pin SOT-363 MMDT4413-7-F
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Frequently Asked Questions

The maximum DC collector current for this model is 600 mA, ensuring robust performance in various applications.

This transistor has a collector-emitter voltage rating of up to 40 V, which allows for safe operation in electronic circuits.

It comes in a compact 6-pin SOT-363 surface mount package, which optimizes space on printed circuit boards.

The maximum transition frequency is 250 MHz, making it suitable for high-speed switching applications.

The operating temperature range is from -65°C to 150°C, allowing it to function in diverse environmental conditions.

The maximum power dissipation rating is 200 mW, enhancing efficiency in electronic circuits.

This unit features an isolated configuration that includes both NPN and PNP polarities, providing versatility in circuit designs.

It complies with the automotive standard AEC-Q101, ensuring reliability in automotive electronics applications.

The dimensions are 2.2 mm in length, 2.2 mm in width, and 1.1 mm in height, making it compact for various applications.

The minimum DC current gain (hFE) is 20, which is important for its amplification capabilities in circuits.

The maximum emitter-base voltage (VEBO) is 6 V, which is a critical parameter for ensuring proper operation in circuits.

The maximum collector-base voltage (VCBO) is 60 V, which is essential for the safe operation of the transistor in various applications.

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