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DiodesZetex Transistor 3 A NPN 12 V 3-Pin E-Line ZTX688BSTZ

Category Bipolar Transistors Brand DiodesZetex Condition New

Specifications

Country of Origin India
Brand DiodesZetex
Model ZTX688BSTZ
Mount Type Through Hole
Series ZTX6X
Maximum Operating Temperature 200°C
Package Type E-Line
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 12V
Minimum DC Current Gain hFE 100
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 12V
Maximum Power Dissipation Pd 1W
Maximum DC Collector Current Idc 3A
Transistor Configuration Single
Maximum Transition Frequency ft 150MHz

Key Features

  • Designed in a 3-pin E-Line package for through-hole mounting.
  • Single transistor configuration suitable for various electronic applications.
  • Features a minimum DC current gain (hFE) of 100 for reliable amplification.
  • High transition frequency of 150 MHz ideal for high-speed switching.
  • Wide operating temperature range from -55°C to 200°C for industrial use.
  • Maximum power dissipation rating of 1 watt ensures durability under load.
  • NPN transistor polarity supports common circuit designs.
  • Maximum emitter-base voltage of 5 volts provides stable operation.

Product Description

DiodesZetex ZTX688BSTZ is a high-performance NPN bipolar transistor designed for general electronic component applications requiring reliable switching and amplification capabilities. Featuring a maximum collector current (Idc) of 3 amperes and a maximum collector-emitter voltage (Vceo) of 12 volts, this transistor operates efficiently within its ratings, making it suitable for various industrial and commercial electronic circuits.

The transistor is housed in a 3-pin E-Line package which facilitates through-hole mounting, ensuring easy integration into printed circuit boards. As a single transistor configuration, it is versatile for use in amplifier circuits, switching applications, and signal processing tasks.

Technical features include a minimum DC current gain (hFE) of 100, allowing for dependable signal amplification. The device supports a maximum transition frequency (ft) of 150 MHz, making it appropriate for high-frequency operation scenarios. It can tolerate a broad operating temperature range from -55°C to 200°C, qualifying it for use in harsh industrial environments where temperature extremes are common.

Its maximum power dissipation (Pd) of 1 watt promises robustness during continuous operation, while the maximum emitter-base voltage (VEBO) of 5 volts guarantees safe voltage handling during circuit switching. The ZTX688BSTZ belongs to the ZTX6X transistor series by DiodesZetex, recognized for general purpose applications.

This transistor does not meet automotive standards but is well-suited for use in electronic devices, laboratory equipment, manufacturing machinery, and various power and signal conditioning scenarios in both industrial and commercial sectors.

Designed in a 3-pin E-Line package suitable for through-hole mounting. Maximum DC collector current of 3 A for reliable power handling. Maximum collector-emitter voltage of 12 V supports medium voltage applications. Minimum DC current gain hFE of 100 enables effective amplification.

Wide operating temperature range from -55°C to 200°C for industrial reliability. Maximum power dissipation rating of 1 W ensures durability. High transition frequency of 150 MHz for high-speed switching. Single transistor configuration with NPN polarity.

Part of the ZTX6X series recognized for general purpose use. Explore more in our Electronics & Electricals category at EnvMart for a wide selection of Bipolar Transistors and related semiconductor components.

DiodesZetex Transistor 3 A NPN 12 V 3-Pin E-Line ZTX688BSTZ
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Frequently Asked Questions

The maximum collector current (Idc) for this transistor is 3 amperes, allowing it to handle significant power in various applications.

The maximum collector-emitter voltage (Vceo) for the ZTX688BSTZ is 12 volts, suitable for medium voltage applications.

This transistor features a minimum DC current gain (hFE) of 100, which enables effective signal amplification.

The ZTX688BSTZ has a maximum transition frequency (ft) of 150 MHz, making it suitable for high-speed switching applications.

It operates within a wide temperature range from -55°C to 200°C, making it reliable for industrial use in extreme conditions.

This model is housed in a 3-pin E-Line package designed for through-hole mounting, facilitating easy integration into circuit boards.

The maximum power dissipation rating for the ZTX688BSTZ is 1 watt, ensuring it can handle loads effectively during operation.

The maximum emitter-base voltage (VEBO) for the ZTX688BSTZ is 5 volts, providing stable operation during circuit switching.

This model is configured as a single transistor, which makes it versatile for various electronic applications.

The ZTX688BSTZ is part of the ZTX6X series, recognized for general-purpose applications in electronics.

The ZTX688BSTZ is manufactured in India, contributing to its availability in various markets.

This transistor is suitable for use in electronic devices, laboratory equipment, manufacturing machinery, and various power and signal conditioning tasks.

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