$23.16
$20.22
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
Vishay TrenchFET Type P-Channel Power MOSFET 12 A 30 V Enhancement 6-Pin SOT-363 SIA449DJ-T1-GE3
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 0.8mm |
| Length | 2.15mm |
| Model | SIA449DJ-T1-GE3 |
| Width | 2.15mm |
| Mount Type | Surface |
| Series | TrenchFET |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-363 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 6 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 12A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 0.038Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 19W |
| Typical Gate Charge Qg @ Vgs | 23.1nC |
| Maximum Gate Source Voltage Vgs | -12, +12V |
| Forward Voltage Vf | -0.8V |
Key Features
- This surface-mount enhancement channel MOSFET delivers a maximum power dissipation of 19 watts.
- It features a low maximum drain-source resistance of 0.038 ohms for efficient operation.
- The device supports an operating temperature range from -55°C to 150°C.
- The typical gate charge at 23.1 nC and maximum gate-source voltage of -12 to +12 volts enable precise switching control.
- This MOSFET is RoHS compliant and manufactured in China to meet industrial standards.
- The compact dimensions of 2.15 mm × 2.15 mm × 0.8 mm facilitate integration into space-constrained circuits.
Product Description
Vishay SIA449DJ-T1-GE3 is a TrenchFET Generation III Type P-Channel Power MOSFET designed for high performance in surface-mount applications. It features a maximum continuous drain current of 12 A and a maximum drain-source voltage of 30 V, making it suitable for efficient power switching in electronic circuits.
The enhancement mode MOSFET comes in a compact 6-pin SOT-363 package with dimensions of 2.15 mm length, 2.15 mm width, and 0.8 mm height, optimizing space usage within densely packed boards.
This device offers a low on-resistance (Rds) of 0.038 Ω which contributes to high efficiency and reduced heat generation during operation. Maximum power dissipation is rated at 19 W, supporting reliable function under demanding electrical loads.
The typical gate charge at a gate-source voltage of 23.1 nC allows effective switching performance. It supports a maximum gate-source voltage range of -12 V to +12 V and has a forward voltage of -0.8 V. The MOSFET's operating temperature range extends from -55°C to 150°C, supporting industrial and commercial environmental conditions.
This surface-mount P-Channel power MOSFET features a low on-resistance of 0.038 ohms for energy-efficient operation. Maximum drain current rating of 12 A and power dissipation up to 19 watts suit medium power applications.
The compact 6-pin SOT-363 package saves PCB space for high-density designs. Wide operating temperature range from -55°C to 150°C ensures reliability in harsh environments. Typical gate charge of 23.1 nC facilitates fast and precise switching.
RoHS compliant, manufactured in China following quality standards. Explore more Power MOSFETs and semiconductors at EnvMart for industrial and electronic design needs.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum continuous drain current for this model is 12 A.
This MOSFET has a maximum drain-source voltage of 30 V.
The maximum drain-source resistance is 0.038 ohms, which contributes to its efficient operation.
The maximum power dissipation for this MOSFET is rated at 19 watts.
The dimensions are 2.15 mm in length, 2.15 mm in width, and 0.8 mm in height.
It supports an operating temperature range from -55°C to 150°C.
The typical gate charge at a gate-source voltage is 23.1 nC.
The maximum gate-source voltage is -12 V to +12 V.
It features a surface mount type for easy integration into circuits.
Yes, this MOSFET is RoHS compliant, meeting environmental standards.
This model has a total of 6 pins.
It utilizes a Type P channel configuration.
Related Products
Other Products from this brand
$1.64
$1.59
-3%
New
$1.99
$1.93
-3%
New
$1.69
$1.64
-3%
New
$1.82
$1.77
-3%
New
$1.54
$1.50
-3%
New
Recently Viewed Products
$23.16
$20.22
Save 12.7%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent