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Vishay Isolated TrenchFET Dual Type P and N Channel Power MOSFET, 4.5 A, 12 V, 6-Pin SC-70 SIA517DJ-T1-GE3
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 0.8mm |
| Length | 2.15mm |
| Model | SIA517DJ-T1-GE3 |
| Width | 2.15mm |
| Mount Type | Surface |
| Series | TrenchFET |
| Maximum Operating Temperature | +150°C |
| Package Type | SC-70 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 6 |
| Number of Elements per Chip | 2 |
| Channel Type | Type P, Type N |
| Maximum Continuous Drain Current Id | 4.5A |
| Maximum Drain Source Voltage Vds | 12V |
| Maximum Drain Source Resistance Rds | 170mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 6.5W |
| Typical Gate Charge Qg @ Vgs | 9.7nC |
| Maximum Gate Source Voltage Vgs | -8, +8V |
| Transistor Configuration | Isolated |
Key Features
- Features isolated trench technology for superior performance.
- Compact 6-pin SC-70 surface mount package ensures easy PCB integration.
- Maximum drain-source resistance of 170 mΩ reduces power loss.
- Operates at temperatures from -55°C to +150°C for wide industrial applications.
- Supports a maximum gate-source voltage range of -8 to +8 V.
- Maximum power dissipation rating of 6.5 W.
- Typical gate charge of 9.7 nC allows for fast switching.
- Includes dual N and P channel elements per chip for versatile circuit designs.
Product Description
Vishay SIA517DJ-T1-GE3 is a dual isolated TrenchFET power MOSFET designed for high-performance switching applications in industrial, electronic, and power management circuits. Featuring both P-type and N-type channels in a compact 6-pin SC-70 surface mount package, it enables efficient power control and compact circuit layouts.
The device supports a continuous drain current of 4.5 A and a maximum drain-source voltage of 12 V, making it suitable for low-voltage power switching applications. The isolated transistor configuration ensures minimal interference, enhancing reliability in sensitive electronic environments.
Operating temperature range from -55°C to +150°C enables use in harsh and industrial temperature conditions. Its maximum drain-source resistance of 170 mΩ and typical gate charge of 9.7 nC provide optimized switching performance and reduced power dissipation.
This power MOSFET supports maximum gate-source voltage swings from -8 V to +8 V and has a power dissipation capacity up to 6.5 W. The device dimensions are compact at 2.15 mm length, 2.15 mm width, and 0.8 mm height, suitable for space-constrained PCB assembly.
It is ideal for applications in power management, electronic device switching, and industrial control equipment in commercial and laboratory settings. Features isolated trench technology for superior performance. Compact 6-pin SC-70 surface mount package ensures easy PCB integration.
Maximum drain-source resistance of 170 mΩ reduces power loss. Operates at temperatures from -55°C to +150°C for wide industrial applications. Supports a maximum gate-source voltage range of -8 to +8 V. Maximum power dissipation rating of 6.5 W.
Typical gate charge of 9.7 nC allows for fast switching. Includes dual N and P channel elements per chip for versatile circuit designs. Explore more Power MOSFET components and high-quality electronic semiconductors from Vishay and other leading brands on EnvMart for your industrial and technological needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 4.5 A.
It supports a maximum drain-source voltage of 12 V.
This MOSFET operates within a temperature range of -55°C to +150°C.
The maximum power dissipation rating is 6.5 W.
The typical gate charge is 9.7 nC, which allows for fast switching.
It comes in a compact 6-pin SC-70 surface mount package.
The maximum drain-source resistance is 170 mΩ, which helps reduce power loss and optimize switching performance.
This model features an isolated transistor configuration with dual N and P channel elements per chip.
It supports a maximum gate-source voltage range of -8 to +8 V.
The dimensions are 2.15 mm in length, 2.15 mm in width, and 0.8 mm in height.
This power MOSFET is ideal for applications in power management, electronic device switching, and industrial control equipment.
It utilizes both P-type and N-type channels, making it versatile for circuit designs.
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