Vishay N-Channel TrenchFET Power MOSFET, 30 A Continuous Drain Current, 30 V Drain Source Voltage, 8-Pin SOIC SI4164DY-T1-GE3

Vishay SI4164DY-T1-GE3 is a high-performance N-Channel TrenchFET Power MOSFET designed for efficient switching and amplification in power management applications. Rated for continuous drain currents of 30 A and a maximum drain-source voltage of 30 V, this MOSFET integrates an 8-pin SOIC surface mount package suitable for automated manufacturing and compact PCB layouts.

Equipped with a low maximum drain-source resistance of 0.0032 ohms, it ensures minimal conduction losses and high efficiency in power circuits. Its enhancement-mode channel and a typical gate charge of 26.5 nC allow fast switching capabilities while maintaining stable performance. The device tolerates gate-source voltages from -20 to +20 V, offering robustness for gate drive signals.

This MOSFET has a maximum power dissipation of 6 W and operates reliably in harsh temperature conditions ranging from -55°C to 150°C, making it ideal for industrial, automotive, and electronic power converter applications. The compact dimensions of 5 mm by 4 mm by 1.55 mm further enable use in space-constrained designs.

Manufactured in compliance with JEDEC JS709A and RoHS standards, the SI4164DY-T1-GE3 ensures environmental and quality adherence. Continuous drain current of 30 A supports high-power applications. 30 V maximum drain-source voltage ensures reliable blocking capability.

Low on-resistance optimizes efficiency and thermal performance. Enhanced switching with typical gate charge of 26.5 nC. Wide operating temperature range for versatile environments. Compact SOIC package with 8 pins for automated assembly.

Compliant with recognized industry standards.

This versatile Power MOSFET is suitable for industrial power supplies, motor drives, electronic controls, and other demanding electronic circuits. For more options, browse our Electronics & Electricals and Discrete Semiconductors categories on EnvMart.