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Vishay P-Channel MOSFET, 35 A, 20 V Enhancement Mode, 8-Pin PowerPAK 1212-8 SI7615ADN-T1-GE3

Category MOSFET Brand Vishay Condition New

Specifications

Country of Origin India
Brand Vishay
Height 1.12mm
Length 3.4mm
Model SI7615ADN-T1-GE3
Width 3.4mm
Mount Type Surface
Series Si7615ADN
Maximum Operating Temperature 150°C
Package Type PowerPAK 1212-8
Minimum Operating Temperature -55°C
Standards/Approvals Lead (Pb)-Free
Pin Count 8
Channel Type Type P
Maximum Continuous Drain Current Id 35A
Maximum Drain Source Voltage Vds 20V
Maximum Drain Source Resistance Rds 0.0044Ω
Channel Mode Enhancement
Maximum Power Dissipation Pd 52W
Typical Gate Charge Qg @ Vgs 59nC
Maximum Gate Source Voltage Vgs -12, +12V
Forward Voltage Vf -1.1V

Key Features

  • This MOSFET features enhancement mode channel operation for efficient switching performance.
  • The maximum drain-source resistance is a low 0.0044 ohms, ensuring minimal conduction losses.
  • It has a maximum power dissipation rating of 52W, supporting high power applications.
  • Operates reliably in temperatures ranging from -55°C to 150°C, suitable for harsh environments.
  • The device offers a typical gate charge of 59nC at Vgs, enabling fast switching.
  • Maximum gate-source voltage is ±12V, providing robust gate control.
  • The compact package dimensions are 3.4mm length, 3.4mm width, and 1.12mm height.
  • This lead (Pb)-free MOSFET conforms to environmental standards.

Product Description

Vishay SI7615ADN-T1-GE3 P-Channel Enhancement Mode MOSFET is engineered for high-performance power switching and management in electronic devices. Rated for a maximum continuous drain current of 35 A with a maximum drain-source voltage of 20 V, this discrete semiconductor device is optimized for surface mounting on printed circuit boards using its compact 8-pin PowerPAK 1212-8 package.

Designed with a low maximum drain-source resistance of 0.0044Ω, it ensures efficient conduction and minimal power loss during operation, supporting up to 52 W power dissipation under normal conditions. The device also features a typical gate charge of 59 nC which facilitates swift switching transitions critical in high-frequency power applications.

Operating temperatures range from -55°C to a high 150°C, making it suitable for automotive and industrial environments that require durable and reliable components. The maximum gate-source voltage tolerance of ±12 V provides enhanced gate control, improving device robustness against transient voltage spikes.

Its physical dimensions of length 3.4 mm, width 3.4 mm, and height 1.12 mm, packaged in a lead (Pb)-free compliant form, meet modern environmental and manufacturing standards. The 8 pins allow ease of integration into various electronic circuits requiring efficient power management solutions.

This MOSFET supports applications in power management, automotive electronics, industrial controls, and consumer electronic devices. Its surface mount packaging reduces footprint and improves thermal performance compared to traditional through-hole devices.

P-Channel operation is ideal for load switching and high-side switch configurations. Lead (Pb)-free compliant construction meets environmental regulations. Compact PowerPAK 1212-8 form factor aids in automated PCB assembly.

Choose Vishay SI7615ADN-T1-GE3 for reliable, high-power MOSFET performance in demanding environments. Explore related Vishay electronic components and power semiconductor solutions at EnvMart for comprehensive application needs.

Vishay P-Channel MOSFET, 35 A, 20 V Enhancement Mode, 8-Pin PowerPAK 1212-8 SI7615ADN-T1-GE3
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Frequently Asked Questions

The maximum continuous drain current for this model is 35 A.

It can handle a maximum drain-source voltage of 20 V.

The maximum power dissipation rating is 52 W.

The dimensions are 3.4 mm in length, 3.4 mm in width, and 1.12 mm in height.

The typical gate charge at Vgs is 59 nC.

The maximum gate-source voltage is ±12 V.

The maximum drain-source resistance is 0.0044 Ω.

It operates reliably in temperatures ranging from -55°C to 150°C.

This MOSFET supports surface mounting.

The package type is PowerPAK 1212-8.

Yes, it is lead (Pb)-free and conforms to environmental standards.

This model is suitable for power management, automotive electronics, industrial controls, and consumer electronic devices.

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