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| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 1.12mm |
| Length | 3.4mm |
| Model | SI7615ADN-T1-GE3 |
| Width | 3.4mm |
| Mount Type | Surface |
| Series | Si7615ADN |
| Maximum Operating Temperature | 150°C |
| Package Type | PowerPAK 1212-8 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | Lead (Pb)-Free |
| Pin Count | 8 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 35A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 0.0044Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 52W |
| Typical Gate Charge Qg @ Vgs | 59nC |
| Maximum Gate Source Voltage Vgs | -12, +12V |
| Forward Voltage Vf | -1.1V |
Vishay SI7615ADN-T1-GE3 P-Channel Enhancement Mode MOSFET is engineered for high-performance power switching and management in electronic devices. Rated for a maximum continuous drain current of 35 A with a maximum drain-source voltage of 20 V, this discrete semiconductor device is optimized for surface mounting on printed circuit boards using its compact 8-pin PowerPAK 1212-8 package.
Designed with a low maximum drain-source resistance of 0.0044Ω, it ensures efficient conduction and minimal power loss during operation, supporting up to 52 W power dissipation under normal conditions. The device also features a typical gate charge of 59 nC which facilitates swift switching transitions critical in high-frequency power applications.
Operating temperatures range from -55°C to a high 150°C, making it suitable for automotive and industrial environments that require durable and reliable components. The maximum gate-source voltage tolerance of ±12 V provides enhanced gate control, improving device robustness against transient voltage spikes.
Its physical dimensions of length 3.4 mm, width 3.4 mm, and height 1.12 mm, packaged in a lead (Pb)-free compliant form, meet modern environmental and manufacturing standards. The 8 pins allow ease of integration into various electronic circuits requiring efficient power management solutions.
This MOSFET supports applications in power management, automotive electronics, industrial controls, and consumer electronic devices. Its surface mount packaging reduces footprint and improves thermal performance compared to traditional through-hole devices.
P-Channel operation is ideal for load switching and high-side switch configurations. Lead (Pb)-free compliant construction meets environmental regulations. Compact PowerPAK 1212-8 form factor aids in automated PCB assembly.
Choose Vishay SI7615ADN-T1-GE3 for reliable, high-power MOSFET performance in demanding environments. Explore related Vishay electronic components and power semiconductor solutions at EnvMart for comprehensive application needs.
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Vishay P-Channel MOSFET, 35 A, 20 V Enhancement Mode, 8-Pin PowerPAK 1212-8 SI7615ADN-T1-GE3
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