onsemi PowerTrench N-Channel MOSFET 26 A 150 V Enhancement 3-Pin TO-252 FDD390N15A

onsemi FDD390N15A is a PowerTrench N-Channel MOSFET designed for discrete semiconductor applications requiring high current and voltage handling capabilities. This MOSFET features a maximum continuous drain current of 26 amperes and a maximum drain-source voltage rating of 150 volts, making it suitable for power switching, motor control, and power management circuits in industrial and electronic applications.

This 3-pin TO-252 surface mount device provides a compact form factor with dimensions 6.73 mm length, 6.22 mm width, and 2.39 mm height, allowing efficient PCB space utilization. The enhancement mode channel is optimized for low on-resistance of 40 milliohms, reducing power dissipation and improving efficiency up to 63 watts of maximum power dissipation.

The device supports a broad ambient operating temperature range from -55°C to 150°C, ensuring reliable performance in harsh industrial environments. The typical gate charge of 14.3 nanocoulombs at gate-source voltages enables quick switching transitions favorable for energy-efficient circuits. The MOSFET also tolerates gate-source voltages up to ±20 volts, protecting gate driver circuits from common voltage spikes.

Applications include industrial power supplies, motor drivers, power inverters, and switching regulators that demand dependable operation. The absence of automotive standard certification indicates this part is targeted at general industrial and commercial applications rather than automotive systems.

Dimensions and 3-pin package make integration straightforward for discrete transistor-based designs, and the PowerTrench series reputation guarantees optimized MOSFET transistor behavior by onsemi.

High continuous drain current of 26 amperes supports robust load handling. 150 volts maximum drain-source voltage suitable for medium voltage circuits. PowerTrench series with enhancement mode operation provides efficient switching.

3-pin TO-252 surface mount package allows compact PCB designs. Maximum power dissipation up to 63 watts enables high power operation. Maximum drain source resistance of 40 milliohms ensures low conduction losses. Wide operating temperature range from -55°C to 150°C for reliability.

Typical gate charge of 14.3 nanocoulombs results in fast switching performance. Built to industrial standards with no special approvals.

This transistor device is a reliable choice for electronic components, power & connectors, semiconductor discrete components used in industrial, commercial, and laboratory power management systems. Browse the category to find compatible semiconductor components and related devices at EnvMart.