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onsemi N-Channel MOSFET 24 A 650 V Enhancement Mode 4-Pin PQFN FCMT125N65S3
Specifications
| Country of Origin | Philippines |
|---|---|
| Brand | onsemi |
| Height | 1.05mm |
| Length | 8mm |
| Model | FCMT125N65S3 |
| Width | 8mm |
| Mount Type | Surface |
| Series | FCMT |
| Maximum Operating Temperature | 150°C |
| Package Type | PQFN |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 24A |
| Maximum Drain Source Voltage Vds | 650V |
| Maximum Drain Source Resistance Rds | 125mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 181W |
| Typical Gate Charge Qg @ Vgs | 49nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 1.2V |
| Internal Gate Resistance | 0.5 Ω |
Key Features
- Enhancement mode MOSFET designed for high efficiency switching applications.
- Maximum power dissipation of 181 W ensures robust thermal handling.
- Ultra-thin leadless SMD package with Kelvin contact minimizes inductance.
- Typical gate charge of 49 nC reduces switching losses and gate noise.
- Optimized low effective output capacitance minimizes power dissipation on switching.
- Maximum operating temperature of 150°C for reliable performance in demanding environments.
- Robust electrical characteristics including forward voltage of 1.2 V and internal gate resistance of 0.5 Ω.
- Ideal for telecommunication, server power, LED lighting, adapter, industrial and cloud systems.
Product Description
onsemi FCMT125N65S3 is a high-performance N-Channel MOSFET designed for industrial and electronic applications requiring efficient power switching and high reliability. This enhancement mode device supports a maximum continuous drain current of 24 A and a drain-source voltage rating of 650 V, suitable for high-voltage power regulation and conversion circuits.
The device is housed in a compact 4-Pin PQFN ultra-thin leadless surface-mount package featuring Kelvin contact technology, which reduces parasitic inductance and improves switching behavior. Its typical gate charge of 49 nC combined with a low effective output capacitance (406 pF) contributes to reduced switching losses, enabling higher efficiency in fast switching applications.
Electrical parameters include a maximum power dissipation of 181 W, a typical forward voltage of 1.2 V, and an internal gate resistance of 0.5 Ω. The MOSFET is designed to operate reliably in a wide temperature range from -55°C to 150°C, supporting demanding operational environments. The device’s maximum gate-source voltage is 30 V, facilitating safe gate drive conditions.
This MOSFET is ideal for use in telecommunications equipment, cloud-based server power supplies, LED lighting systems, adapters, and various industrial electronic control applications. Its robust design underpins high power density and system reliability, making it a versatile choice for power management in modern electronics.
Enhancement mode N-Channel MOSFET with 24 A drain current capability. 650 V maximum drain-source voltage and 181 W power dissipation rating. 4-Pin PQFN leadless ultra-thin surface mount package with Kelvin contact. Low gate charge and output capacitance for efficient switching.
Wide operating temperature range of -55°C to 150°C. Internal gate resistance of 0.5 Ω enhances switching performance. Applications include telecommunication, industrial power systems, LED lighting, and server power supplies.
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Frequently Asked Questions
The maximum continuous drain current for this model is 24 A.
This MOSFET has a maximum drain-source voltage rating of 650 V.
The maximum power dissipation for this model is 181 W.
The dimensions of this model are 8 mm in length, 8 mm in width, and 1.05 mm in height.
The typical gate charge for this MOSFET is 49 nC.
This model operates reliably within a temperature range of -55°C to 150°C.
It is housed in a 4-Pin PQFN ultra-thin leadless surface-mount package.
The internal gate resistance is 0.5 Ω.
This MOSFET is suitable for telecommunications equipment, cloud-based server power supplies, LED lighting systems, and industrial electronic control applications.
The typical forward voltage for this MOSFET is 1.2 V.
The maximum gate-source voltage is 30 V.
This model is an N-channel enhancement mode MOSFET.
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