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onsemi PowerTrench N-Channel MOSFET 3.4 A 100 V Surface Mount SOIC 8-Pin FDS86106
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.5mm |
| Length | 4mm |
| Model | FDS86106 |
| Width | 5mm |
| Mount Type | Surface |
| Series | PowerTrench |
| Maximum Operating Temperature | 150°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 3.4A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 177mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 5W |
| Typical Gate Charge Qg @ Vgs | 3nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.3V |
Key Features
- This MOSFET supports a maximum continuous drain current of 3.4 amperes.
- It features a maximum drain-source voltage rating of 100 volts for reliable switching.
- The device utilizes a surface mount SOIC package with 8 pins for compact PCB layouts.
- Low on-resistance at 177 milliohms improves efficiency and reduces power loss.
- Typical gate charge is 3 nanocoulombs enhancing switching speed performance.
- Operates in an enhancement channel mode with maximum power dissipation of 5 watts.
- It is rated for a temperature range from -55°C to 150°C ensuring durability in harsh environments.
- The package dimensions are approximately 4 mm length, 5 mm width, and 1.5 mm height.
Product Description
onsemi FDS86106 is a PowerTrench N-Channel MOSFET designed for high efficiency and reliable switching performance in electronic circuits. This enhancement mode transistor supports a maximum continuous drain current of 3.4 amperes and withstands a maximum drain-source voltage of 100 volts. Packaged in an 8-pin SOIC surface mount, it suits compact PCB designs requiring robust semiconductor components.
Its low drain-source resistance of 177 milliohms minimizes conduction losses, improving energy efficiency. The typical gate charge of 3 nanocoulombs enables fast switching speeds, beneficial for power management and signal processing applications.
With a maximum power dissipation rating of 5 watts and an operating temperature range from -55°C to 150°C, this MOSFET is suitable for industrial environments requiring stable operation under temperature stress. Its compact package dimensions of 4 mm by 5 mm by 1.5 mm contribute to space-saving installation on printed circuit boards.
Though not specified for automotive standards, the FDS86106 transistor can be utilized in various fields including consumer electronics, industrial automation, and power supply sections where efficient semiconductor switching is critical.
This MOSFET supports a maximum continuous drain current of 3.4 amperes. It features a maximum drain-source voltage rating of 100 volts for reliable switching. The device utilizes a surface mount SOIC package with 8 pins for compact PCB layouts.
Low on-resistance at 177 milliohms improves efficiency and reduces power loss. Typical gate charge is 3 nanocoulombs enhancing switching speed performance. Operates in an enhancement channel mode with maximum power dissipation of 5 watts.
It is rated for a temperature range from -55°C to 150°C ensuring durability in harsh environments. The package dimensions are approximately 4 mm length, 5 mm width, and 1.5 mm height. Designed without automotive standards but suitable for various industrial and consumer electronics circuits.
Explore the extensive range of electronic components including MOSFETs on EnvMart for cutting-edge industrial and laboratory applications.
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Frequently Asked Questions
The maximum continuous drain current for this MOSFET is 3.4 amperes.
It features a maximum drain-source voltage rating of 100 volts.
The package dimensions are approximately 4 mm in length, 5 mm in width, and 1.5 mm in height.
The typical gate charge is 3 nanocoulombs, which enhances switching speed performance.
It has a low on-resistance of 177 milliohms, which improves efficiency and reduces power loss.
The maximum power dissipation rating is 5 watts.
It operates within a temperature range from -55°C to 150°C.
This MOSFET utilizes a surface mount SOIC package with 8 pins.
It is an N-channel MOSFET, operating in enhancement mode.
This MOSFET can be utilized in various fields including consumer electronics, industrial automation, and power supply sections.
The maximum gate-source voltage rating is -20V to +20V.
The country of origin for this model is India.
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