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STMicroelectronics N-Channel MDmesh SuperMESH MOSFET 17.5 A 950 V Enhancement 3-Pin TO-247 STW20N95K5
Specifications
| Country of Origin | China |
|---|---|
| Brand | STMicroelectronics |
| Height | 20.15mm |
| Length | 15.75mm |
| Model | STW20N95K5 |
| Width | 5.15mm |
| Mount Type | Through Hole |
| Series | MDmesh, SuperMESH |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 17.5A |
| Maximum Drain Source Voltage Vds | 950V |
| Maximum Drain Source Resistance Rds | 330mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 250W |
| Typical Gate Charge Qg @ Vgs | 40nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.5V |
Key Features
- Supports maximum continuous drain current of 17.5 A for robust operation.
- Maximum drain-source voltage rating of 950 V provides high voltage tolerance.
- TO-247 package with 3 pins supports through-hole mounting.
- Enhancement channel mode with low drain-source resistance of 330 milliohms.
- Capable of dissipating maximum power of 250 W and operable up to 150°C.
- Characteristic typical gate charge of 40 nanocoulombs at Vgs rated at 40 V.
- Wide operating temperature range from -55°C to 150°C for industrial environments.
- Maximum gate-source voltage of -30 V to +30 V ensures stable gate control.
Product Description
STMicroelectronics STW20N95K5 is a high-performance N-Channel MDmesh SuperMESH MOSFET designed for applications requiring high voltage and current capacity.
This MOSFET supports a maximum continuous drain current of 17.5 A and withstands a maximum drain-source voltage of up to 950 V, making it suitable for power devices and switching applications in industrial electronic systems.
The device is housed in a 3-pin TO-247 package which supports through-hole mounting, ensuring stable mechanical and electrical connection. Featuring an enhancement mode channel with a maximum drain-source resistance (Rds) of 330 milliohms, this MOSFET offers efficient conduction and reduced power loss.
With a maximum power dissipation rating of 250 W, this component can handle significant power levels while maintaining operation within a wide temperature range - from -55°C to 150°C - suitable for demanding industrial environments.
Maximum continuous drain current of 17.5 A ensures robust load handling. High voltage tolerance at 950 V drain-source voltage. Low Rds(on) of 330 mΩ for minimized conduction losses. Typical gate charge of 40 nC supports fast switching capabilities.
Wide gate-source voltage range up to ±30 V for flexible gating. Forward voltage of 1.5 V supports efficient power conversion. Compact TO-247 3-pin package ensures easy integration. Operating temperature from -55°C to 150°C enables reliability in harsh conditions.
This MOSFET is engineered for use in power management, electronic switching, motor control, industrial automation, and other electronic applications requiring reliable high-voltage semiconductor devices.
EnvMart customers can browse similar electronic semiconductor components and MOSFETs for various power and switching needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 17.5 A, ensuring robust load handling in various applications.
This MOSFET has a maximum drain-source voltage rating of 950 V, providing high voltage tolerance for power applications.
It is housed in a TO-247 package type, which supports through-hole mounting for stable connections.
The maximum power dissipation rating for this MOSFET is 250 W, allowing it to handle significant power levels.
The typical gate charge for this model is 40 nanocoulombs (nC) at a gate-source voltage (Vgs) of 40 V, supporting fast switching capabilities.
This model operates within a wide temperature range from -55°C to 150°C, making it suitable for industrial environments.
The maximum gate-source voltage for this MOSFET is -30 V to +30 V, ensuring stable gate control.
It features a maximum drain-source resistance (Rds) of 330 milliohms, which minimizes conduction losses during operation.
The dimensions of the TO-247 package are 20.15 mm in height, 15.75 mm in length, and 5.15 mm in width.
This model utilizes an N-channel type, designed for enhancement mode operation.
This MOSFET is engineered for applications in power management, electronic switching, motor control, and industrial automation.
It belongs to the MDmesh and SuperMESH series, known for high-performance characteristics in power devices.
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