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Infineon HEXFET N-Channel MOSFET, 130 A, 100 V, 300 W Power Dissipation, TO-220, 3-Pin IRFB4310PBF

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Infineon HEXFET N-Channel MOSFET, 130 A, 100 V, 300 W Power Dissipation, TO-220, 3-Pin IRFB4310PBF

Name: Infineon HEXFET N-Channel MOSFET, 130 A, 100 V, 300 W Power Dissipation, TO-220, 3-Pin IRFB4310PBF
Brand: Infineon
SKU: 392778
Price: 2.64 USD
Availability: InStock

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Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Height	9.02mm
Length	10.66mm
Model	IRFB4310PBF
Width	4.82mm
Mount Type	Through Hole
Series	HEXFET
Maximum Operating Temperature	175°C
Package Type	TO-220
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	130A
Maximum Drain Source Voltage Vds	100V
Maximum Drain Source Resistance Rds	7mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	300W
Typical Gate Charge Qg @ Vgs	170nC
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	1.3V

Key Features

Supports high continuous drain current of 130 A ensuring substantial load handling capability.
Operates at a maximum drain-source voltage of 100 V suitable for varied power applications.
Low drain-source resistance of 7 mΩ reduces power loss and heat generation.
Enhancement mode channel operation enhances switching efficiency and performance.
High maximum power dissipation rated at 300 W for demanding thermal conditions.
Wide operating temperature range from -55°C up to 175°C for versatile industrial environments.
Compact TO-220 through-hole package with 3 pins for easy mounting and thermal management.
Features rugged avalanche and dynamic dV/dt capabilities to protect against voltage spikes.

Product Description

Infineon IRFB4310PBF is a HEXFET N-Channel MOSFET designed for high-performance power switching applications. With a maximum continuous drain current of 130 A and a voltage rating of 100 V, it supports robust power delivery in demanding automation and electronic systems. Its TO-220 3-pin package allows through-hole mounting and efficient heat dissipation, making it ideal for industrial and electrical use cases.

This device operates in enhancement mode and offers a low drain-source resistance (Rds(on)) of 7 mΩ, which minimizes conduction losses and heat generation. It is rated for a maximum power dissipation of 300 W, ensuring reliable operation even under heavy loads. The MOSFET supports a gate-source voltage range of -20 V to +20 V and features a typical gate charge of 170 nC for optimized switching performance.

Engineered to withstand harsh environments, the IRFB4310PBF functions reliably over a temperature range from -55°C to 175°C. Its integrated avalanche and dynamic dV/dt ruggedness provide protection against voltage spikes and transient events common in industrial power electronics.

Applications of this MOSFET include high-efficiency synchronous rectification, uninterruptible power supplies, high-speed switching circuits, and demanding automation tasks. Its low Rds(on) characteristic ensures high power efficiency and reduced heat generation, leading to improved energy management and system longevity.

Support for continuous drain current up to 130 A allows handling substantial electrical loads. TO-220 package type enables efficient thermal conduction and easy mounting in power electronics setups. Enhancement mode channel operation improves control and energy efficiency.

Wide operating temperature range suits applications in fluctuating and harsh environments. Rugged avalanche capability protects against voltage surges for device longevity. Typical gate charge supports optimized switching speeds and reduced losses.

Designed for industrial, automation, power management, and electrical industry use. Its robust construction and high electrical tolerances make it suitable for various industrial, electronic, and power management applications.

Explore our comprehensive MOSFET category for compatible components and solutions tailored to industrial and electronic engineering needs.

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Frequently Asked Questions

The maximum continuous drain current for this model is 130 A, allowing it to handle substantial electrical loads effectively.

It has a maximum drain-source voltage rating of 100 V, making it suitable for various power applications.

This MOSFET is rated for a maximum power dissipation of 300 W, ensuring reliable operation under demanding conditions.

The drain-source resistance (Rds(on)) is 7 mΩ, which helps to minimize conduction losses and heat generation.

It operates within a wide temperature range from -55°C to 175°C, suitable for various industrial environments.

This model comes in a TO-220 package type, which allows for through-hole mounting and efficient thermal management.

The typical gate charge (Qg) at Vgs is 170 nC, which supports optimized switching performance.

The maximum gate-source voltage is rated at -20 V to +20 V, accommodating a range of control signals.

It utilizes an N-channel type, which is commonly used for high-performance power switching applications.

This model is suitable for applications such as high-efficiency synchronous rectification, uninterruptible power supplies, and high-speed switching circuits.

The dimensions of this model are 10.66 mm in length, 4.82 mm in width, and 9.02 mm in height.

The channel mode is enhancement, which enhances switching efficiency and performance in applications.