Vishay MDmesh SuperMESH N-Channel MOSFET, 53 A, 500 V Enhancement, 4-Pin ISOTOP STE53NC50

STMicroelectronics STE53NC50 is an N-Channel MDmesh SuperMESH MOSFET transistor designed for high-performance power switching and amplification applications. Featuring a maximum continuous drain current of 53 A and a drain-source voltage rating of 500 V, it operates efficiently within harsh industrial and electronic environments. The device utilizes advanced MDmesh SuperMESH technology to provide low on-resistance and fast switching capabilities.

This MOSFET is packaged in a 4-pin ISOTOP configuration, optimized for panel mounting, which facilitates thermal management and mechanical stability. Its high maximum power dissipation of 460 W supports heavy-duty electrical loads without compromising reliability.

Designed to withstand a wide operating temperature range from -65°C to 150°C, this component is well-suited for industrial, automotive, and power electronics applications requiring robustness and durability. The typical gate charge of 310 nC allows precise gate control, enhancing switching efficiency. The device also exhibits a low forward voltage drop of 1.6 V for improved conduction efficiency.

Measuring 38.2 mm in length, 25.5 mm in width, and 9.1 mm in height, the STE53NC50 offers a compact footprint for space-constrained designs. Its panel mount type and 4-pin count make it easy to integrate into printed circuit boards and power modules.

Supports a maximum continuous drain current of 53 A for robust power handling. Maximum drain-source voltage of 500 V suitable for high voltage applications. Enhanced MDmesh SuperMESH technology ensures efficient switching performance.

Package type is ISOTOP with 4 pins for easy panel mounting. Maximum power dissipation rated at 460 W allowing high power operation. Operating temperature range from -65°C to 150°C allows usage in harsh environments. Low maximum drain-source resistance of 80 mΩ reduces conduction losses.

Typical gate charge of 310 nC ensures responsive gate control. Forward voltage drop of 1.6 V enhances efficiency during conduction. Compact dimensions facilitate integration into power electronic circuits.

This MOSFET is ideal for use in industrial motor drives, power supplies, automotive electronics, and other electronic equipment requiring reliable high voltage and current handling capabilities. STMicroelectronics provides quality semiconductor solutions for a variety of demanding applications.

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