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Vishay TrenchFET N-Channel MOSFET, 100 A, 80 V Enhancement Mode, SO-8 Package, 8-Pin SIR680DP-T1-RE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 1.12mm |
| Length | 6.25mm |
| Model | SIR680DP-T1-RE3 |
| Width | 5.26mm |
| Mount Type | Surface |
| Series | TrenchFET |
| Maximum Operating Temperature | 150°C |
| Package Type | SO-8 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 100A |
| Maximum Drain Source Voltage Vds | 80V |
| Maximum Drain Source Resistance Rds | 3.4mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 104W |
| Typical Gate Charge Qg @ Vgs | 69.5nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.1V |
Key Features
- This MOSFET features a low drain source resistance of 3.4 milliohms enabling efficient power handling.
- Designed with TrenchFET Gen IV technology to provide enhanced switching performance.
- Supports an operating temperature range from -55°C to 150°C for high reliability.
- Typical gate charge is 69.5 nanocoulombs at the rated gate voltage for fast switching.
- The device comes in a compact SO-8 package measuring 6.25mm length, 5.26mm width, and 1.12mm height.
- Maximum power dissipation is rated at 104 W for demanding applications.
- It supports gate-source voltages from -20 V to +20 V for robust control.
Product Description
Vishay SIR680DP-T1-RE3 is a high-performance N-Channel MOSFET designed using advanced TrenchFET Gen IV technology to meet demanding power switching and amplification requirements in electronic circuits.
With a maximum continuous drain current of 100 A and a maximum drain-source voltage of 80 V, this device offers excellent conduction and switching characteristics for efficient power management.
The MOSFET is housed in a compact 8-pin SO-8 surface mount package, enabling easy integration into high-density PCB layouts in industrial, automotive, and consumer electronics applications.
Featuring a low maximum drain-source resistance of 3.4 milliohms, it minimizes conduction losses and improves energy efficiency. The typical gate charge of 69.5 nC supports rapid and precise switching performance critical for PWM and power conversion tasks.
Operating over a wide temperature range from -55°C to 150°C, this MOSFET ensures reliable performance in harsh environments. The maximum power dissipation rating of 104 W facilitates handling high power loads without thermal failure.
This MOSFET features a low drain source resistance of 3.4 milliohms enabling efficient power handling. Designed with TrenchFET Gen IV technology to provide enhanced switching performance. Supports an operating temperature range from -55°C to 150°C for high reliability.
Typical gate charge is 69.5 nanocoulombs at the rated gate voltage for fast switching. The device comes in a compact SO-8 package measuring 6.25mm length, 5.26mm width, and 1.12mm height. Maximum power dissipation is rated at 104 W for demanding applications.
It supports gate-source voltages from -20 V to +20 V for robust control.
This Vishay MOSFET is widely used in industrial power management, motor control, power supplies, automotive electronics, and consumer electronic devices requiring efficient energy conversion and thermal stability.
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Frequently Asked Questions
The maximum continuous drain current for this model is 100 A.
This MOSFET has a maximum drain-source voltage rating of 80 V.
The typical gate charge is 69.5 nanocoulombs at the rated gate voltage.
It supports an operating temperature range from -55°C to 150°C.
The maximum power dissipation for this model is rated at 104 W.
It features a low maximum drain-source resistance of 3.4 milliohms.
This device comes in a compact SO-8 surface mount package.
The dimensions of this model are 6.25mm in length, 5.26mm in width, and 1.12mm in height.
It supports gate-source voltages from -20 V to +20 V.
This model features an N-channel type.
It is widely used in industrial power management, motor control, power supplies, automotive electronics, and consumer electronics requiring efficient energy conversion.
This device uses a surface mount type for installation.
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