Vishay N-Channel MOSFET, 29 A, 150 V Enhancement Mode, 8-Pin SO-8 Package SIR632DP-T1-RE3

Vishay SIR632DP-T1-RE3 is a high-performance N-Channel MOSFET designed with enhancement mode technology. It offers a maximum continuous drain current of 29 A and a drain-source voltage rating up to 150 V, making it ideal for robust power switching applications in industrial, electronic, and power management systems. Packaged in a compact SO-8 surface mount format, this device supports efficient PCB assembly and integration.

The device boasts a low maximum drain-source resistance of 41 milliohms, contributing to reduced conduction losses and improved energy efficiency. It can safely dissipate up to 69.5 W of power, accommodating demanding electrical loads. The MOSFET's operating temperature range from -55°C to 150°C ensures reliability in harsh environmental conditions.

With a typical gate charge of 14 nC and a maximum gate-source voltage of ±20 V, the MOSFET supports rapid switching speeds suited for dynamic load control. Its dimensions of 6.25 mm length, 5.26 mm width, and 1.12 mm height provide a small footprint, suitable for compact electronic designs. The forward voltage of -1.2 V further optimizes conduction efficiency.

This Vishay MOSFET is suitable for industrial electronics, power supply circuits, power converters, and other semiconductor applications requiring high current and voltage handling capability. It supports surface mount assembly techniques, streamlining manufacturing processes.

The MOSFET features an enhancement mode channel for efficient switching operations. Package type SO-8 supports compact surface mounting in electronic circuits. Maximum continuous drain current of 29 amperes supports high power applications.

Drain-source resistance is low at 41 milliohms, ensuring minimal power loss. Supports maximum power dissipation up to 69.5 watts for thermal reliability. Operates reliably between -55°C minimum and 150°C maximum ambient temperatures.

Typical gate charge of 14 nanocoulombs enables fast switching performance. Maximum gate-source voltage ranges between -20 and +20 volts. Physical dimensions include length of 6.25 mm, width of 5.26 mm, and height of 1.12 mm.

Forward voltage of -1.2 volts ensures low conduction losses. Explore our full range of semiconductor components in the Electronics & Electricals category at EnvMart for high-quality industrial and electronic solutions.