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Vishay N-Channel MOSFET 8 A, 500 V, Enhancement Mode, 3-Pin TO-220 Package IRF840LCPBF

Category MOSFET Brand Vishay Condition New

Specifications

Country of Origin Mexico
Brand Vishay
Height 9.01mm
Length 10.41mm
Model IRF840LCPBF
Width 4.7mm
Mount Type Through Hole
Series IRF840LC
Maximum Operating Temperature 150°C
Package Type TO-220
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 8A
Maximum Drain Source Voltage Vds 500V
Maximum Drain Source Resistance Rds 850mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 125W
Typical Gate Charge Qg @ Vgs 39nC
Maximum Gate Source Voltage Vgs -30, +30V
Forward Voltage Vf 2V
IRF840LCPBF N-Channel MOSFET, 8 A, 500 V, 3-Pin TO-220AB VishayBrand Vishay

Key Features

  • This MOSFET features an enhancement mode channel type for efficient switching.
  • The device is housed in a 3-pin TO-220 package suitable for through-hole mounting.
  • Maximum drain-source resistance is 850 milliohms ensuring low conduction losses.
  • It supports a maximum gate-source voltage of -30V to +30V for reliable gate control.
  • Typical gate charge is 39 nanocoulombs enabling fast switching times.
  • The MOSFET dissipates a maximum power of 125 watts allowing it to handle substantial loads.
  • Operating temperature range extends from -55 to 150 degrees Celsius for industrial environments.
  • Forward voltage drop is rated at 2 volts for efficient conduction.

Product Description

Vishay IRF840LCPBF is a high-performance N-Channel MOSFET designed for power switching and amplification applications. Featuring an 8 amp maximum continuous drain current and a 500 volt maximum drain-source voltage rating, it is well suited for industrial, laboratory, and electronic power management systems.

This MOSFET operates in enhancement mode and comes in a robust 3-pin TO-220 package suitable for through-hole mounting, ensuring ease of install in printed circuit boards. The device delivers efficient switching capabilities with a typical gate charge of 39 nanocoulombs, minimizing switching losses in high-frequency applications.

With a maximum drain-source resistance of 850 milliohms, it provides low conduction losses reducing overall heat generation. It supports a wide gate-source voltage range from -30 to +30 volts, ensuring stable gate control and protection against voltage spikes.

The device can dissipate up to 125 watts of power, making it capable of handling substantial power loads. Its temperature tolerance ranges from -55 degrees Celsius to 150 degrees Celsius, enabling operation in harsh industrial and automotive environments.

Forward voltage drop of the MOSFET is 2 volts, ensuring efficient current flow when switched on. Its compact dimensions of 10.41 mm length, 9.01 mm height, and 4.7 mm width make it suitable for space-constrained applications.

This MOSFET features an enhancement mode channel type for efficient switching. The device is housed in a 3-pin TO-220 package suitable for through-hole mounting. Maximum drain-source resistance is 850 milliohms ensuring low conduction losses.

It supports a maximum gate-source voltage of -30V to +30V for reliable gate control. Typical gate charge is 39 nanocoulombs enabling fast switching times. The MOSFET dissipates a maximum power of 125 watts allowing it to handle substantial loads.

Operating temperature range extends from -55 to 150 degrees Celsius for industrial environments. Forward voltage drop is rated at 2 volts for efficient conduction.

Widely used in power supplies, motor control, and electronic switching applications, Vishay IRF840LCPBF is a reliable and efficient semiconductor solution. Users can integrate it into industrial, commercial electronic, and HVAC control systems with confidence. Browse more in our MOSFET category to find complementary electronic components from Vishay and other leading manufacturers.

Vishay N-Channel MOSFET 8 A, 500 V, Enhancement Mode, 3-Pin TO-220 Package IRF840LCPBF
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Frequently Asked Questions

The maximum continuous drain current for this model is 8 A.

It has a maximum drain-source voltage rating of 500 V.

The typical gate charge is 39 nanocoulombs.

This MOSFET can dissipate a maximum power of 125 watts.

The operating temperature range extends from -55°C to 150°C.

It is housed in a 3-pin TO-220 package suitable for through-hole mounting.

The maximum gate-source voltage is -30V to +30V.

The forward voltage drop is rated at 2 volts.

The maximum drain-source resistance is 850 milliohms.

The dimensions are 10.41 mm in length, 9.01 mm in height, and 4.7 mm in width.

This model features an N-channel type for efficient switching.

The country of origin for this MOSFET is Mexico.

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