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Infineon HEXFET Type P-Channel MOSFET, 11 A Current, 55 V Voltage, 38 W Power Dissipation, 3-Pin IPAK IRFU9024NPBF
Specifications
| Country of Origin | Mexico |
|---|---|
| Brand | Infineon |
| Height | 6.22mm |
| Length | 6.73mm |
| Model | IRFU9024NPBF |
| Width | 2.39mm |
| Mount Type | Through Hole |
| Series | HEXFET |
| Maximum Operating Temperature | 150°C |
| Package Type | IPAK |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 11A |
| Maximum Drain Source Voltage Vds | 55V |
| Maximum Drain Source Resistance Rds | 175mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 38W |
| Typical Gate Charge Qg @ Vgs | 19nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.6V |
| Infineon HEXFET P-Channel MOSFET, 11 A, 55 V, 3-Pin IPAK IRFU9024NPBFBrand | Infineon |
Key Features
- Low on-resistance of 175mΩ improves energy efficiency significantly.
- Maximum power dissipation of 38 W supports robust and reliable performance.
- Through-hole IPAK package with 3 pins enables easy mounting and PCB integration.
- Operates reliably within a wide temperature range from -55°C to 150°C.
- Enhancement mode device suitable for power supplies, motor control, and battery management systems.
- Flexible gate-source voltage range from -20 V to +20 V ensures versatile application conditions.
- Complies with lead-free standards for environmentally conscious designs.
- Dimensioned compactly with height 6.22 mm, width 2.39 mm, and length 6.73 mm.
Product Description
Infineon IRFU9024NPBF is a HEXFET Type P-Channel MOSFET designed for high-efficiency power management and switching applications requiring reliable operation up to 11 A of continuous drain current and a voltage rating of 55 V. Its IPAK through-hole package with 3 pins allows straightforward PCB mounting and integration into various electronics and industrial systems.
The device features a low on-resistance of 175 milliohms which minimizes conduction losses and contributes to energy-efficient system design. With a maximum power dissipation capacity of 38 W, it can handle significant power loads while maintaining thermal stability.
This MOSFET functions in enhancement mode and supports a wide gate-source voltage range from -20 V to +20 V, with a typical gate charge of 19 nC at Vgs, facilitating reliable switching performance. It operates effectively over a broad temperature range from -55°C to 150°C, allowing use in diverse environmental conditions including automotive and industrial scenarios.
Applications include power supply regulation, battery management circuits, motor control systems, and other industrial automation equipment requiring robust and efficient power handling.
Low Rds(on) of 175mΩ enhances energy efficiency and reduces power losses. 38 W maximum power dissipation ensures robust performance under high load. Through-hole IPAK 3-pin package provides compatibility with standard PCB layouts.
Wide operating temperature range (-55°C to 150°C) ensures reliable operation in demanding environments. Suitable for power supply and conversion circuits, motor controls, and battery management systems. Lead-free compliant, meeting environmental standards for safer electronics manufacturing.
The product is manufactured in Mexico by Infineon Technologies AG and meets industry performance expectations for discrete semiconductor components. Explore EnvMart's extensive selection of semiconductors and power management devices for your industrial, electronic, automotive, and manufacturing needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 11 A.
It has a maximum drain-source voltage rating of 55 V.
The maximum power dissipation capacity is 38 W.
The low on-resistance is 175 milliohms, which helps improve energy efficiency.
It supports a flexible gate-source voltage range from -20 V to +20 V.
The dimensions are 6.22 mm in height, 2.39 mm in width, and 6.73 mm in length.
It operates reliably within a wide temperature range from -55°C to 150°C.
This model uses a through-hole IPAK package with 3 pins for easy mounting.
It is suitable for power supply regulation, motor control systems, and battery management circuits.
The typical gate charge at Vgs is 19 nC.
It is manufactured in Mexico by Infineon Technologies AG.
The channel type of this model is P-Channel.
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