$2.24
$2.17
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
Infineon OptiMOS 3 N-Channel MOSFET, 90 A, 60 V Enhancement, 7-Pin WDSON BSB028N06NN3GXUMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 0.53mm |
| Length | 6.35mm |
| Model | BSB028N06NN3GXUMA1 |
| Width | 5.05mm |
| Mount Type | Surface |
| Series | OptiMOS 3 |
| Maximum Operating Temperature | 150°C |
| Package Type | WDSON |
| Minimum Operating Temperature | -40°C |
| Pin Count | 7 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 90A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 2.8mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 78W |
| Typical Gate Charge Qg @ Vgs | 108nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.2V |
Key Features
- Maximum continuous drain current of 90 A ensures robust current handling capacity.
- Rated for 60 V maximum drain-source voltage suitable for medium voltage applications.
- 7-Pin WDSON surface mount package offers compact footprint and effective thermal performance.
- Enhancement channel mode with low Rds(on) of 2.8 mΩ for improved power efficiency.
- Operates reliably from -40°C to 150°C, ideal for demanding industrial environments.
- Typical gate charge of 108 nC supports fast switching performance.
- Maximum power dissipation of 78 W supports stable operation under load.
- Forward voltage drop is 1.2 V, reducing overall conduction losses.
Product Description
Infineon BSB028N06NN3GXUMA1 OptiMOS 3 N-Channel MOSFET is engineered for high efficiency and power density in electronic applications. With a maximum drain current of 90 A and voltage rating of 60 V, it is designed for demanding power switching scenarios such as power supplies, DC/DC converters, and industrial electronics.
This MOSFET features a compact 7-pin WDSON package, providing excellent thermal performance and surface mount convenience, making it ideal for high density PCB layouts in industrial and automotive electronics. The device operates in enhancement mode with a low Rds(on) resistance of 2.8 mΩ, delivering reduced conduction losses and improved energy efficiency.
Its gate charge and voltage ratings enable fast switching, optimized for modern SMPS and voltage regulation use cases. The operational temperature range from -40°C to 150°C ensures reliable performance across challenging environments.
Applications include industrial manufacturing equipment, commercial power management, and automotive electronics not requiring automotive standards compliance. The device is lead-free and RoHS compliant, adhering to environmental standards.
Maximum continuous drain current of 90 A enables handling of substantial loads. 60 V maximum drain-source voltage supports medium-voltage circuits. Low on-resistance of 2.8 mΩ enhances power efficiency. Compact 7-pin WDSON surface mount package promotes efficient PCB use.
Wide operating temperature range from -40°C to 150°C. Typical gate charge rate of 108 nC for high-speed switching. Max power dissipation rated at 78 W for thermal reliability. Set contains 1 Pc Infineon OptiMOS 3 N-Channel MOSFET BSB028N06NN3GXUMA1.
Explore the full range of Power MOSFET devices from Infineon in the Electronics & Electricals category at EnvMart.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum continuous drain current of this model is 90 A, allowing for robust current handling capacity in various applications.
This MOSFET has a maximum drain-source voltage rating of 60 V, making it suitable for medium voltage applications.
It features a low on-resistance of 2.8 mΩ, which enhances power efficiency and reduces conduction losses.
The typical gate charge is 108 nC, which supports fast switching performance in electronic applications.
The dimensions of the package are 6.35 mm in length, 5.05 mm in width, and 0.53 mm in height.
It operates reliably within a temperature range of -40°C to 150°C, suitable for demanding industrial environments.
The maximum power dissipation is rated at 78 W, which supports stable operation under load.
This model uses surface mounting, which is convenient for high-density PCB layouts.
It is designed for demanding power switching scenarios such as power supplies, DC/DC converters, and industrial electronics.
The forward voltage drop is 1.2 V, which helps in reducing overall conduction losses.
This model features an N-channel type, operating in enhancement mode.
Yes, it is lead-free and RoHS compliant, adhering to environmental standards.
Related Products
$23.16
$20.22
-12.7%
Other Products from this brand
$19.84
$19.24
-3%
New
Recently Viewed Products
$2.24
$2.17
Save 3%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent