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Vishay P-Channel MOSFET 12 A 100 V Enhancement 3-Pin TO-220 IRF9530PBF

Category Power MOSFET Brand Vishay Condition New

Specifications

Country of Origin China
Brand Vishay
Height 9.01mm
Length 10.41mm
Model IRF9530PBF
Width 4.7mm
Mount Type Through Hole
Series IRF9530
Maximum Operating Temperature 175°C
Package Type TO-220
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type Type P
Maximum Continuous Drain Current Id 12A
Maximum Drain Source Voltage Vds 100V
Maximum Drain Source Resistance Rds 300mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 88W
Typical Gate Charge Qg @ Vgs 38nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf -6.3V
IRF9530PBF P-Channel MOSFET, 12 A, 100 V, 3-Pin TO-220AB VishayBrand Vishay

Key Features

  • Rated for a maximum continuous drain current of 12 amperes.
  • Operates at a maximum drain-source voltage of 100 volts.
  • Enhancement mode type P-channel MOSFET with low on-resistance.
  • Features a maximum power dissipation of 88 watts.
  • Designed for through-hole mounting in a standard TO-220 package with 3 pins.
  • Wide operating temperature range from -55°C up to 175°C.
  • Typical gate charge of 38 nC at gate-source voltage.
  • Gate-source voltage rated at ±20 volts maximum.

Product Description

Vishay IRF9530PBF is a P-Channel Enhancement mode MOSFET designed for efficient power switching and amplification applications. It supports a continuous drain current up to 12 amperes and withstands drain-source voltages up to 100 volts, making it suitable for various power management, industrial, and electronic component assemblies.

Featuring a standard TO-220 package with through-hole mount capability, the device provides robust thermal performance with a maximum power dissipation rating of 88 watts and an operating temperature range from -55°C to 175°C. This MOSFET is optimized for low on-resistance operation, with a maximum drain-source resistance of 300 milliohms, ensuring minimal conduction losses.

The typical gate charge is 38 nanocoulombs at specified gate-source voltage, and the device accepts gate-source voltages ranging from -20 to +20 volts. Forward voltage rating is -6.3 volts, characteristic of P-Channel devices.

The compact physical dimensions (length 10.41 mm, width 4.7 mm, height 9.01 mm) allow integration into various electronic circuits requiring reliable switching components. It is manufactured in China, without automotive certification, chiefly intended for electronic and power semiconductor applications.

Common industrial applications include power supplies, motor control circuits, DC-DC converters, and general electronic systems requiring P-Channel MOSFET switching devices. The device's performance parameters enable usage in laboratory, manufacturing, and HVAC control scenarios.

Rated maximum continuous drain current of 12 A. Drain-source voltage rating of 100 V. Enhancement mode P-Channel MOSFET with low on-resistance. Maximum power dissipation of 88 W for high thermal tolerance. Standard TO-220 through-hole mount package with 3 pins.

Wide operating temperature range from -55°C to 175°C. Typical gate charge of 38 nC at Vgs. Gate-source voltage limit ±20 V. Compact size: 10.41 mm length, 4.7 mm width, and 9.01 mm height. Manufactured in China without automotive grade.

Explore a wide range of Vishay semiconductor products and Power MOSFETs on EnvMart for reliable, high-performance electronic components for your industrial and commercial needs.

Vishay P-Channel MOSFET 12 A 100 V Enhancement 3-Pin TO-220 IRF9530PBF
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Frequently Asked Questions

The maximum continuous drain current for this model is 12 amperes.

It operates at a maximum drain-source voltage of 100 volts.

The maximum power dissipation rating is 88 watts.

The typical gate charge is 38 nanocoulombs at the specified gate-source voltage.

The dimensions of the TO-220 package are 10.41 mm in length, 4.7 mm in width, and 9.01 mm in height.

The maximum gate-source voltage is rated at ±20 volts.

It has a wide operating temperature range from -55°C to 175°C.

This model has 3 pins.

It is designed for through-hole mounting in a standard TO-220 package.

The forward voltage rating is -6.3 volts.

The maximum drain-source resistance is 300 milliohms.

This MOSFET is suitable for power management, motor control circuits, DC-DC converters, and general electronic systems requiring P-Channel switching devices.

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