$6.59
$6.39
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
Vishay EF Series N-Channel MOSFET, 33 A, 600 V Enhancement, 3-Pin TO-247 SiHG33N60EF-GE3
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 20.82mm |
| Length | 15.87mm |
| Model | SiHG33N60EF-GE3 |
| Width | 5.31mm |
| Mount Type | Through Hole |
| Series | EF |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 33A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 98mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 278W |
| Typical Gate Charge Qg @ Vgs | 103nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.2V |
Key Features
- High maximum continuous drain current of 33 A for reliable power handling.
- 600 V maximum drain-source voltage ensures suitability for high voltage applications.
- Low maximum drain-source resistance of 98 mΩ minimises power losses.
- Enhancement channel mode with ultra low gate charge (103 nC) for efficient switching.
- Maximum power dissipation capacity of 278 W supports high power operations.
- Operating temperature range from -55°C to 150°C for demanding environments.
- Compact TO-247 through-hole mounting package with three pins for easy soldering.
- Fast diode feature reduces reverse recovery time and charge to increase robustness.
Product Description
Vishay SiHG33N60EF-GE3 is a high-performance N-channel power MOSFET from the EF series, designed for demanding electronic applications requiring efficient switching and high current handling. It supports a maximum continuous drain current of 33 A and withstands drain-source voltages up to 600 V, making it suitable for power electronics, industrial, and automotive systems.
This device incorporates a fast body diode with reduced reverse recovery time and charge, improving switching efficiency and minimizing losses common in high-speed operation. Its low gate charge of 103 nC enables rapid switching with minimal energy consumption at the gate drive.
Housed in a TO-247 package, the MOSFET supports through-hole mounting, facilitating easy installation in standard circuit boards. The package dimensions - height 20.82 mm, length 15.87 mm, and width 5.31 mm - allow for efficient thermal management. It offers a maximum power dissipation rating of 278 W, suitable for high power applications.
Operational temperature ranges from -55°C to 150°C, ensuring durability in harsh environments including industrial automation, power supplies, motor drives, and power conversion systems. The device is manufactured in China under the Vishay Semiconductor line with no explicit automotive certification.
High continuous drain current of 33 A aids robust power delivery. 600 V drain-source voltage rating supports versatile usage scenarios. Low Rds(on) of 98 mΩ lowers conduction losses. Fast body diode reduces switching losses and increases device reliability.
Low typical gate charge for high switching speed and efficiency. Wide operating temperature range for industrial and commercial use. Standard TO-247 through-hole package for easy PCB integration. Forward voltage of 1.2 V optimizes conduction efficiency.
This MOSFET is ideal for applications in industrial power management, motor control, power supplies, and other electronics requiring efficient high-voltage switching and robust performance. Explore the Vishay MOSFET category on EnvMart for more options with similar or enhanced specifications.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum continuous drain current for this model is 33 A, allowing for reliable power handling in various applications.
It has a maximum drain-source voltage rating of 600 V, making it suitable for high voltage applications.
The typical gate charge for the SiHG33N60EF-GE3 is 103 nC, which enables efficient switching with minimal energy consumption.
This unit can handle a maximum power dissipation of 278 W, supporting high power operations in demanding environments.
The TO-247 package dimensions are height 20.82 mm, length 15.87 mm, and width 5.31 mm, facilitating easy PCB integration.
The operating temperature range is from -55°C to 150°C, ensuring functionality in harsh environments.
Yes, it incorporates a fast body diode that reduces reverse recovery time and charge, improving switching efficiency.
It supports through-hole mounting, which allows for easy soldering onto standard circuit boards.
The maximum gate-source voltage is -30 V to +30 V, providing flexibility in circuit design.
This model uses an N-channel configuration, which is common for power MOSFET applications.
The maximum drain-source resistance (Rds(on)) is 98 mΩ, which helps minimize conduction losses.
It is suitable for applications in industrial power management, motor control, power supplies, and other electronics requiring efficient high-voltage switching.
Related Products
$23.16
$20.22
-12.7%
Other Products from this brand
$1.64
$1.59
-3%
New
Recently Viewed Products
$103.22
$100.13
-3%
New
$6.59
$6.39
Save 3%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent