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onsemi Isolated PowerTrench Dual N/P-Channel MOSFET 3A 20V Enhancement Mode 6-Pin SSOT FDC6420C
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1mm |
| Length | 3mm |
| Model | FDC6420C |
| Width | 1.7mm |
| Mount Type | Surface |
| Series | PowerTrench |
| Maximum Operating Temperature | 150°C |
| Package Type | SSOT |
| Minimum Operating Temperature | -55°C |
| Pin Count | 6 |
| Number of Elements per Chip | 2 |
| Channel Type | Type P, Type N |
| Maximum Continuous Drain Current Id | 3A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 190mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 960mW |
| Typical Gate Charge Qg @ Vgs | 3.3nC |
| Maximum Gate Source Voltage Vgs | -12, +12V |
| Forward Voltage Vf | 0.7V |
| Transistor Configuration | Isolated |
Key Features
- Dual N and P-channel MOSFET configuration for enhanced circuit design flexibility.
- Maximum continuous drain current rating of 3 Amperes ensures reliable performance.
- Low maximum drain-source resistance of 190 milliohms minimizes conduction losses.
- Surface mount SSOT 6-pin package suitable for compact PCB layouts.
- Operating temperature range from -55°C to 150°C supports harsh environments.
- Maximum power dissipation of 960 milliwatts enables efficient heat management.
- Typical gate charge of 3.3 nanocoulombs ensures fast switching speeds.
- Forward voltage of 0.7V with isolated transistor configuration enhances switching efficiency.
Product Description
onsemi FDC6420C Isolated PowerTrench Dual N/P-Channel MOSFET is designed for efficient power switching applications with maximum continuous drain current of 3A and a maximum drain-source voltage rating of 20V. This transistor features an enhancement mode channel with a shielded-gate structure, enabling low on-resistance and fast switching capabilities, making it ideal for power supplies and synchronous rectification in electronic circuits.
The compact 6-pin SSOT surface mount package with dimensions 3mm (length) x 1.7mm (width) x 1mm (height) supports high-density PCB integration. It operates reliably over a broad temperature range from -55°C to 150°C and dissipates up to 960mW power. The device combines low gate charge (3.3nC at Vgs), low forward voltage (0.7V), and isolated transistor configuration allowing for efficient power management and reduced electromagnetic interference.
Classic use cases include applications in industrial power supplies, consumer electronics, automotive electronic controls, and general purpose switching in commercial and laboratory equipment. The dual transistor configuration integrates both N-channel and P-channel MOSFETs in a single chip, offering design simplification and performance enhancement.
Dual N and P-channel MOSFETs in isolated transistor configuration. Surface mount SSOT package ideal for compact electronic assemblies. Low gate charge and low drain-source resistance support fast switching and minimal losses.
Wide operating temperature supports rugged environmental conditions. Advanced shielded-gate architecture enhances system efficiency and power density. Designed for power management in industrial, automotive, and consumer electronics.
Maximum drain-source voltage of 20V with 3A continuous drain current rating. High power dissipation capacity enables sustained performance under load. Compact footprint facilitates integration into dense circuit designs.
Explore EnvMart for additional onsemi MOSFETs and power semiconductor devices to match your specific industrial or laboratory requirements.
Explore more products in our Power MOSFET category.
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Frequently Asked Questions
The maximum continuous drain current rating of this model is 3 Amperes.
It has a maximum drain-source voltage rating of 20 Volts.
The typical gate charge is 3.3 nanocoulombs at Vgs.
This MOSFET comes in a surface mount SSOT package with dimensions of 3mm in length, 1.7mm in width, and 1mm in height.
The maximum power dissipation is 960 milliwatts.
It operates over a temperature range from -55°C to 150°C.
The maximum drain-source resistance is 190 milliohms.
It supports both N-channel and P-channel configurations.
This model is suitable for power supplies, synchronous rectification, and general-purpose switching in various electronic circuits.
The forward voltage is 0.7 Volts.
The maximum gate-source voltage is -12V for P-channel and +12V for N-channel.
The FDC6420C contains 2 elements per chip, integrating both N-channel and P-channel MOSFETs.
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