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onsemi PowerTrench N-Channel MOSFET, 5.5 A, 30 V, Enhancement Mode, 6-Pin SSOT Package FDC645N

Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1mm
Length 3mm
Model FDC645N
Width 1.7mm
Mount Type Surface
Series PowerTrench
Maximum Operating Temperature 150°C
Package Type SSOT
Minimum Operating Temperature -55°C
Pin Count 6
Channel Type N
Maximum Continuous Drain Current Id 5.5A
Maximum Drain Source Voltage Vds 30V
Maximum Drain Source Resistance Rds 48mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 1.6W
Typical Gate Charge Qg @ Vgs 13nC
Maximum Gate Source Voltage Vgs -12, +12V
Forward Voltage Vf 0.7V

Key Features

  • Features enhancement mode channel operation for reliable switching performance.
  • Compact 6-pin SSOT package with dimensions 3 mm length, 1.7 mm width, and 1 mm height.
  • Low maximum drain-source resistance of 48 milliohms ensures low conduction losses.
  • Supports maximum gate-source voltage ranging from -12 V to +12 V.
  • Maximum power dissipation rated at 1.6 W with operating temperature range from -55°C to 150°C.
  • Typical gate charge of 13 nanoCoulombs at Vgs standard test conditions.
  • Forward voltage drop is 0.7 V for efficient operation.
  • Surface mount type package ideal for compact electronic designs.

Product Description

onsemi FDC645N PowerTrench N-Channel MOSFET is a high-performance electronic component designed for switching and amplification applications in semiconductor circuits. It features a 6-pin SSOT surface mount package providing a compact footprint with dimensions of 3 mm in length, 1.7 mm in width, and 1 mm in height.

With a maximum continuous drain current of 5.5 A and a drain-source voltage rating of 30 V, this transistor operates in enhancement mode to enable efficient and reliable power switching. Its low drain-source resistance of 48 milliohms reduces power losses and improves thermal performance.

The device tolerates a maximum gate-source voltage of -12 V to +12 V, suitable for various control voltages, and dissipates up to 1.6 W, supporting extended operating temperature ranges from -55°C to 150°C, making it ideal for diverse industrial and electronic applications including power management, signal switching, and control circuits.

The FDC645N exhibits a typical gate charge of 13 nC, allowing for fast switching speeds and reduced gate drive losses. The forward voltage drop of 0.7 V contributes to the overall efficiency in power conversion and switching tasks.

This type of PowerTrench MOSFET is widely used in industrial, laboratory, manufacturing, and electronic assembly environments where compact size and efficient power handling are critical.

Features enhancement mode channel operation for reliable switching performance. Compact 6-pin SSOT package with dimensions 3 mm length, 1.7 mm width, and 1 mm height. Low maximum drain-source resistance of 48 milliohms ensures low conduction losses.

Supports maximum gate-source voltage ranging from -12 V to +12 V. Maximum power dissipation rated at 1.6 W with operating temperature range from -55°C to 150°C. Typical gate charge of 13 nanoCoulombs at Vgs standard test conditions.

Forward voltage drop is 0.7 V for efficient operation. Surface mount type package ideal for compact electronic designs. Compatible with electronic circuit designs requiring efficient N-channel MOSFET switching for power and signal control.

Explore more semiconductor devices and PowerTrench MOSFETs at EnvMart for reliable industrial-grade electronic components.

onsemi PowerTrench N-Channel MOSFET, 5.5 A, 30 V, Enhancement Mode, 6-Pin SSOT Package FDC645N
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Frequently Asked Questions

The maximum continuous drain current for this model is 5.5 A.

The maximum drain-source voltage rating is 30 V.

The dimensions of the package are 3 mm in length, 1.7 mm in width, and 1 mm in height.

The maximum power dissipation is rated at 1.6 W.

The operating temperature range is from -55°C to 150°C.

The typical gate charge is 13 nanoCoulombs (nC) at Vgs standard test conditions.

The forward voltage drop is 0.7 V.

The maximum gate-source voltage ranges from -12 V to +12 V.

It features enhancement mode channel operation for reliable switching performance.

The maximum drain-source resistance is 48 milliohms (mΩ).

This model uses a surface mount type package.

This MOSFET is typically used in power management, signal switching, and control circuits.

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