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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1mm |
| Length | 3mm |
| Model | FDC645N |
| Width | 1.7mm |
| Mount Type | Surface |
| Series | PowerTrench |
| Maximum Operating Temperature | 150°C |
| Package Type | SSOT |
| Minimum Operating Temperature | -55°C |
| Pin Count | 6 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 5.5A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 48mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.6W |
| Typical Gate Charge Qg @ Vgs | 13nC |
| Maximum Gate Source Voltage Vgs | -12, +12V |
| Forward Voltage Vf | 0.7V |
onsemi FDC645N PowerTrench N-Channel MOSFET is a high-performance electronic component designed for switching and amplification applications in semiconductor circuits. It features a 6-pin SSOT surface mount package providing a compact footprint with dimensions of 3 mm in length, 1.7 mm in width, and 1 mm in height.
With a maximum continuous drain current of 5.5 A and a drain-source voltage rating of 30 V, this transistor operates in enhancement mode to enable efficient and reliable power switching. Its low drain-source resistance of 48 milliohms reduces power losses and improves thermal performance.
The device tolerates a maximum gate-source voltage of -12 V to +12 V, suitable for various control voltages, and dissipates up to 1.6 W, supporting extended operating temperature ranges from -55°C to 150°C, making it ideal for diverse industrial and electronic applications including power management, signal switching, and control circuits.
The FDC645N exhibits a typical gate charge of 13 nC, allowing for fast switching speeds and reduced gate drive losses. The forward voltage drop of 0.7 V contributes to the overall efficiency in power conversion and switching tasks.
This type of PowerTrench MOSFET is widely used in industrial, laboratory, manufacturing, and electronic assembly environments where compact size and efficient power handling are critical.
Features enhancement mode channel operation for reliable switching performance. Compact 6-pin SSOT package with dimensions 3 mm length, 1.7 mm width, and 1 mm height. Low maximum drain-source resistance of 48 milliohms ensures low conduction losses.
Supports maximum gate-source voltage ranging from -12 V to +12 V. Maximum power dissipation rated at 1.6 W with operating temperature range from -55°C to 150°C. Typical gate charge of 13 nanoCoulombs at Vgs standard test conditions.
Forward voltage drop is 0.7 V for efficient operation. Surface mount type package ideal for compact electronic designs. Compatible with electronic circuit designs requiring efficient N-channel MOSFET switching for power and signal control.
Explore more semiconductor devices and PowerTrench MOSFETs at EnvMart for reliable industrial-grade electronic components.
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