Toshiba N-Channel Enhancement MOSFET TO-3P Package, 20 A Drain Current, 600 V Drain-Source Voltage TK20J60W,S1VQ(O)

Toshiba TK20J60W,S1VQ(O is an N-Channel enhancement type MOSFET designed primarily for power electronics applications requiring high voltage and current capabilities. Housed in a durable TO-3P through-hole package, it offers a continuous drain current capacity of 20 amperes and withstands drain-source voltages up to 600 volts.

This device is well-suited for use in industrial electronics, power management circuits, and switching regulators. The low maximum drain-source resistance of 155 milliohms ensures efficient conduction, helping to minimize power loss and thermal issues.

The MOSFET features a typical gate charge of 48 nanocoulombs at a gate-source voltage of 48 V which supports stable and fast switching. The gate-source voltage is rated up to ±30 volts, enhancing device protection under varying electrical conditions. It achieves power dissipation capabilities of up to 165 watts, allowing it to handle significant loads while maintaining performance within an operating temperature range from -55°C to 150°C.

With a length of 15.5 mm, width of 4.5 mm, and height of 20 mm, the component's compact form factor eases incorporation into various PCB layouts. The product is manufactured in Japan, ensuring adherence to stringent quality control processes.

Toshiba TK series MOSFETs are trusted components in applications such as power conversion, motor drives, and industrial automation. This part is ideal for customers seeking reliable and high-performance MOSFETs for demanding electronic designs.

Designed in a TO-3P through-hole package with 3 pins for easy mounting. Supports a maximum continuous drain current of 20 amperes for robust handling. Operates at a maximum drain-source voltage of 600 volts for high voltage applications.

Features a low maximum drain-source resistance of 155 milliohms ensuring efficient conduction. Enhancement mode channel type for reliable switching performance. Gate charge typical value 48 nanocoulombs at Vgs for stable gate drive control.

Maximum gate-source voltage tolerance of -30 V to +30 V for enhanced reliability. Capable of dissipating up to 165 watts of power under maximum conditions. Temperature operating range from -55°C to 150°C for industrial versatility.

Japanese origin ensuring high-quality manufacturing standards. Browse additional MOSFET products from Toshiba on EnvMart for a wide selection of power electronics components.