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onsemi UniFET N-Channel MOSFET 23 A 400 V Enhancement Mode 3-Pin TO-3PN FDA24N40F

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onsemi UniFET N-Channel MOSFET 23 A 400 V Enhancement Mode 3-Pin TO-3PN FDA24N40F

Name: onsemi UniFET N-Channel MOSFET 23 A 400 V Enhancement Mode 3-Pin TO-3PN FDA24N40F
Brand: onsemi
SKU: 386718
Price: 4.19 USD
Availability: InStock

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Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	20.1mm
Length	16.2mm
Model	FDA24N40F
Width	5mm
Mount Type	Through Hole
Series	UniFET
Maximum Operating Temperature	150°C
Package Type	TO-3PN
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	23A
Maximum Drain Source Voltage Vds	400V
Maximum Drain Source Resistance Rds	190mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	235W
Typical Gate Charge Qg @ Vgs	46nC
Maximum Gate Source Voltage Vgs	-30, +30V
Forward Voltage Vf	1.5V

Key Features

UniFET technology provides low on-state resistance and superior switching performance.
Maximum continuous drain current of 23 A supports high current operations.
Enhancement mode channel ensures reliable and efficient conduction control.
Compact 3-pin TO-3PN package supports through-hole mounting.
High power dissipation of 235 W allows robust thermal management.
Wide operating temperature range from -55°C to 150°C suits industrial environments.
Internal gate-source ESD diode withstands surge stress up to 2000 V HBM.
Typical gate charge of 46 nC optimizes switching speed.

Product Description

onsemi FDA24N40F is a UniFET N-Channel MOSFET designed for industrial and electronic power applications. This enhancement mode transistor features a continuous drain current of 23 A and a maximum drain-source voltage of 400 V, housed in a compact 3-pin TO-3PN package suitable for through-hole mounting.

The UniFET technology offers one of the lowest on-state resistance among planar MOSFETs, ensuring efficient conduction with minimal loss. This device exhibits superior switching characteristics and high avalanche energy strength, making it ideal for demanding industrial conditions such as power factor correction (PFC), flat panel display TVs, ATX power supplies, and electronic lamp ballasts.

Key technical specifications include a maximum power dissipation of 235 W and operating temperatures ranging from -55°C to 150°C, catering to harsh environments. The transistor also contains an internal gate-source diode that supports ESD surge withstand capability of over 2000 V HBM, enhancing device reliability during transient events.

The low gate charge of 46 nC contributes to faster switching speeds, reducing overall switching losses. Its small physical dimensions of length 16.2 mm, width 5 mm, and height 20.1 mm facilitate integration into compact electronic assemblies.

UniFET technology for low on-state resistance and high avalanche energy strength. 23 A maximum continuous drain current suitable for high power switching. 400 V maximum drain-source voltage for robust voltage handling. Enhancement mode operation enables efficient control of conduction.

TO-3PN 3-pin through-hole package for easy mounting and thermal management. High power dissipation rating supports industrial power electronics. Wide operating temperature range of -55°C to 150°C for diverse environments.

Internal gate-source ESD diode for surge protection up to 2000 V HBM. Low typical gate charge enhances switching efficiency.

This device is widely used in industrial, manufacturing, HVAC, and power management sectors for switching power converters, lamp ballasts, and other power conversion applications. Its robust construction and excellent electrical characteristics make it an ideal choice for designers requiring reliable and high-performance MOSFETs.

Explore more semiconductor components and related power MOSFET products in the Electronics & Electricals category at EnvMart.

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Frequently Asked Questions

The maximum continuous drain current for this model is 23 A, making it suitable for high power switching applications.

This N-channel MOSFET can handle a maximum drain-source voltage of 400 V.

It has a maximum power dissipation rating of 235 W, which supports robust thermal management in various applications.

The typical gate charge for this model is 46 nC, which helps optimize switching speed.

The operating temperature range for this MOSFET is from -55°C to 150°C, suitable for industrial environments.

It is housed in a compact 3-pin TO-3PN package, which supports through-hole mounting.

The maximum drain-source resistance for this MOSFET is 190 mΩ, ensuring efficient conduction.

Yes, it includes an internal gate-source ESD diode that withstands surge stress up to 2000 V HBM, enhancing reliability during transient events.

This device features an N-channel configuration, which is common for enhancement mode MOSFETs.

It is widely used in industrial and electronic power applications, including power factor correction, ATX power supplies, and electronic lamp ballasts.