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Infineon StrongIRFET N-Channel MOSFET, 240 A, 60 V Enhancement Mode, 7-Pin TO-263 IRFS7530TRL7PP

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 4.83mm
Length 10.67mm
Model IRFS7530TRL7PP
Width 9.65mm
Mount Type Surface
Series StrongIRFET
Maximum Operating Temperature 175°C
Package Type TO-263
Minimum Operating Temperature -55°C
Pin Count 7
Channel Type N
Maximum Continuous Drain Current Id 240A
Maximum Drain Source Voltage Vds 60V
Maximum Drain Source Resistance Rds 1.4mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 375W
Typical Gate Charge Qg @ Vgs 236nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 1.2V

Key Features

  • Maximum continuous drain current of 240 A supports high power applications.
  • Maximum drain-source voltage rating of 60 V ensures robust voltage tolerance.
  • Low drain-source resistance of 1.4 milliohms lowers conduction losses.
  • Enhanced gate and avalanche ruggedness for improved reliability.
  • Typical gate charge of 236 nC enables efficient switching performance.
  • Maximum power dissipation of 375 W suits demanding industrial environments.
  • Wide operating temperature range from -55°C to 175°C enhances durability.
  • Compact package dimensions with TO-263 format optimize PCB space.

Product Description

Infineon's IRFS7530TRL7PP StrongIRFET N-Channel MOSFET is engineered for superior low RDS(on) and high current capability. This enhancement mode transistor is housed in a 7-pin TO-263 package designed for surface mounting, providing high power dissipation of 375 W and a maximum continuous drain current of 240 A at 60 V drain-source voltage.

The device features a low maximum drain-source resistance of 1.4 milliohms which reduces conduction losses, making it suitable for energy-efficient industrial applications. With a typical gate charge of 236 nC, the MOSFET supports rapid switching, ideal for use in motor drives, power tools, inverters, and battery management systems where performance and robustness are critical.

The operating temperature range from -55°C to 175°C ensures resilience in harsh environments. The compact TO-263 package, measuring 10.67 mm in length, 9.65 mm in width, and 4.83 mm in height, facilitates integration into tightly packed circuit boards while surface mount technology enables automated assembly processes.

Infineon's StrongIRFET family is known for improved gate, avalanche, and dynamic dv/dt ruggedness to withstand challenging electrical conditions. This MOSFET is a reliable choice for industrial and commercial power management needs where high efficiency and durability are paramount.

Supports maximum continuous drain current of 240 A for high power applications. Rated for maximum drain-source voltage of 60 V. Low drain-source on-resistance of 1.4 milliohms for reduced power loss. High max power dissipation of 375 W enhances robustness.

Typical gate charge of 236 nC allows efficient switching. Wide operation temperature range from -55°C to 175°C for tough environments. Compact 7-pin TO-263 surface mount package for easy PCB integration. Ideal for use in motor drives, power tools, inverters, and battery management.

Explore the Electronics & Electricals category at EnvMart for more high-quality MOSFETs and power semiconductor devices from trusted brands like Infineon.

Infineon StrongIRFET N-Channel MOSFET, 240 A, 60 V Enhancement Mode, 7-Pin TO-263 IRFS7530TRL7PP
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Frequently Asked Questions

The maximum continuous drain current of this model is 240 A, making it suitable for high power applications.

This MOSFET has a maximum drain-source voltage rating of 60 V, ensuring robust voltage tolerance.

It features a low maximum drain-source resistance of 1.4 milliohms, which helps reduce conduction losses.

The typical gate charge for this MOSFET is 236 nC, which enables efficient switching performance.

This unit can handle a maximum power dissipation of 375 W, making it suitable for demanding industrial environments.

The operating temperature range is from -55°C to 175°C, allowing it to function in harsh conditions.

The TO-263 package dimensions are 10.67 mm in length, 9.65 mm in width, and 4.83 mm in height.

This model has a pin count of 7, designed for surface mounting.

It features an N-channel configuration, which is typical for enhancement mode transistors.

The maximum gate-source voltage for this MOSFET is -20V to +20V, allowing for flexibility in circuit design.

This MOSFET is ideal for applications such as motor drives, power tools, inverters, and battery management systems.

The country of origin for this model is India.

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