World's First Climate Tech Platform | Free Delivery in India | Global Shipping

For Bulk Enquiry: sales@envmart.com

onsemi N-Channel Enhancement Mode MOSFET, 200 mA, 60 V, 3-Pin TO-92 Package 2N7000-D26Z

Free Delivery in India | Lowest Global Shipping Charges

onsemi N-Channel Enhancement Mode MOSFET, 200 mA, 60 V, 3-Pin TO-92 Package 2N7000-D26Z

Name: onsemi N-Channel Enhancement Mode MOSFET, 200 mA, 60 V, 3-Pin TO-92 Package 2N7000-D26Z
Brand: onsemi
SKU: 386713
Price: 0.25 USD
Availability: InStock



Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	5.33mm
Length	5.2mm
Model	2N7000-D26Z
Width	4.19mm
Mount Type	Through Hole
Series	2N7000
Maximum Operating Temperature	150°C
Package Type	TO-92
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	200mA
Maximum Drain Source Voltage Vds	60V
Maximum Drain Source Resistance Rds	9Ω
Channel Mode	Enhancement
Maximum Power Dissipation Pd	400mW
Maximum Gate Source Voltage Vgs	-40, +40V
Forward Voltage Vf	0.88V

Key Features

This MOSFET is of enhancement mode type with N-channel channel type.
It has a maximum continuous drain current of 200 mA ensuring efficient current flow.
The device supports a maximum drain-source voltage (Vds) of 60 V for robust performance.
It comes in a 3-pin TO-92 through-hole package for easy mounting and integration.
Maximum power dissipation is rated at 400 mW, allowing stability in power management tasks.
The maximum drain-source resistance Rds(on) is 9 ohms for lower conduction losses.
Operating temperature range spans from -55°C minimum up to 150°C maximum for versatility in harsh environments.
The maximum gate-source voltage is rated at -40 V to +40 V, providing gate control flexibility.

Product Description

The onsemi 2N7000-D26Z is an N-channel enhancement mode MOSFET designed for use in various electronic component applications. It delivers a maximum continuous drain current of 200 mA and can tolerate a drain-source voltage of up to 60 V. Packaged in a 3-pin TO-92 through-hole form factor, this transistor is straightforward to mount and suitable for prototyping as well as production circuits.

Manufactured using advanced DMOS technology, it offers a low on-state resistance of 9 ohms, improving efficiency in switching and amplification tasks. Its maximum power dissipation rating of 400 mW allows it to operate reliably under moderate power conditions, making it ideal for low-power switching and amplification within power management circuits.

Operating across a wide thermal range from -55°C to 150°C, the 2N7000-D26Z is robust against varying industrial and commercial environment temperatures. The gate-source voltage tolerance from -40 V to +40 V ensures strong control over the transistor switching state. The device features a forward voltage drop of 0.88 V which optimizes its switching performance.

The transistor's compact dimensions of 5.33 mm height, 5.2 mm length, and 4.19 mm width help save board space in device assemblies. It is typically used in industrial electronics, power supplies, and control systems where reliable switching and low conduction losses are critical.

This MOSFET is an enhancement mode semiconductor device with an N-channel. Maximum continuous drain current and drain-source voltage are 200 mA and 60 V respectively. The package type is TO-92, facilitating through-hole mount applications.

Maximum power dissipation capability is 400 mW at continuous operation. Drain-source resistance is minimized to 9 ohms for improved efficiency. The device operates over a temperature range of -55°C to 150°C. Gate-source voltage limits from -40 V to +40 V provide switching flexibility.

The device forward voltage is 0.88 V aiding in low loss switching. Physical dimensions support compact and space-saving circuit designs.

This onsemi MOSFET is well suited for use in electronics and power control units, including industrial automation, consumer electronics, and communication equipment. Explore EnvMart categories for more semiconductor and transistor options tailored to different technical needs.