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Toshiba Power N-Channel Enhancement Mode MOSFET 72 A 120 V 3-Pin TO-220 TK72E12N1,S1X(S
Specifications
| Country of Origin | China |
|---|---|
| Brand | Toshiba |
| Height | 15.1mm |
| Length | 10.16mm |
| Model | TK72E12N1,S1X(S |
| Width | 4.45mm |
| Mount Type | Through Hole |
| Series | TK |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 72A |
| Maximum Drain Source Voltage Vds | 120V |
| Maximum Drain Source Resistance Rds | 4.4mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 225W |
| Typical Gate Charge Qg @ Vgs | 130nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.2V |
Key Features
- Maximum continuous drain current of 72 amperes provides high current handling capability.
- Drain-source voltage rating of 120 volts for demanding power applications.
- Enhancement mode channel type ensures efficient switching performance.
- Low on-resistance of 4.4 milliohms reduces conduction losses.
- Designed for through-hole mounting in TO-220 package format.
- Maximum power dissipation of 225 watts supports intensive power loads.
- Gate-source voltage tolerance ranges from -20 to +20 volts for robust control input.
- Maximum operating temperature up to 150 degrees Celsius for reliable performance.
Product Description
The Toshiba TK72E12N1,S1X(S is a power N-Channel enhancement mode MOSFET designed for high current and voltage applications. This device features a maximum continuous drain current of 72A and a drain-source voltage rating of 120V, making it suitable for a wide range of electronic circuits requiring efficient switching and power control.
The transistor is housed in a rugged 3-pin TO-220 through-hole package, facilitating durable mounting and ease of integration into various PCB designs. With a very low on-resistance of 4.4 milliohms, the MOSFET reduces power loss and heat generation during operation.
It supports a maximum power dissipation of 225 watts and can operate reliably up to 150°C, allowing stable performance under demanding thermal conditions. Its gate-source voltage range from -20V to +20V provides excellent control flexibility, while the typical gate charge of 130 nC enables rapid switching, essential for efficient power management.
Compact dimensions of 15.1 mm height, 10.16 mm length, and 4.45 mm width accommodate space-constrained designs. Although not qualified to automotive standards, this semiconductor is ideal for industrial, commercial, and laboratory power electronics, including power supplies, motor drives, and switching regulators.
Maximum continuous drain current of 72 amperes. Drain-source voltage rating of 120 volts. Low on-resistance of 4.4 milliohms. Enhancement mode channel for efficient switching. TO-220 3-pin through hole package. Maximum power dissipation of 225 watts.
Gate-source voltage of -20 to +20 volts. Operating temperature up to 150°C. Typical gate charge 130 nanocoulombs. Compact size 15.1x10.16x4.45 mm.
This Toshiba power MOSFET is a reliable component for power electronics applications and is designed to ensure high performance and durability. Explore more power semiconductors and discrete MOSFETs within the Electronics & Electricals category at EnvMart for comprehensive industrial, laboratory, and commercial use cases.
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Frequently Asked Questions
The maximum continuous drain current for this model is 72 amperes.
It has a drain-source voltage rating of 120 volts, suitable for demanding power applications.
The on-resistance is 4.4 milliohms, which helps reduce conduction losses during operation.
This model is housed in a TO-220 package, designed for through-hole mounting.
The maximum power dissipation is 225 watts, allowing it to support intensive power loads.
The gate-source voltage tolerance ranges from -20 to +20 volts, providing robust control input.
It can operate reliably at temperatures up to 150 degrees Celsius.
The dimensions are 15.1 mm in height, 10.16 mm in length, and 4.45 mm in width.
The typical gate charge is 130 nanocoulombs, enabling rapid switching.
It is suitable for industrial, commercial, and laboratory power electronics, including power supplies and motor drives.
This model has a 3-pin configuration, facilitating easy integration into various PCB designs.
This MOSFET uses an N-channel enhancement mode, which ensures efficient switching performance.
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