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Toshiba N-Channel MOSFET 58 A 60 V Enhancement Mode 3-Pin TO-220 TK58A06N1,S4X(S
Specifications
| Country of Origin | China |
|---|---|
| Brand | Toshiba |
| Height | 15mm |
| Length | 10mm |
| Model | TK58A06N1,S4X(S |
| Width | 4.5mm |
| Mount Type | Through Hole |
| Series | TK |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 58A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 5.4mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 35W |
| Typical Gate Charge Qg @ Vgs | 46nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.2V |
Key Features
- This MOSFET has an enhancement channel mode for efficient switching performance.
- Constructed with a 3-pin TO-220 through-hole mount package for versatile PCB integration.
- Maximum continuous drain current is rated at 58 amperes.
- Maximum power dissipation capacity is 35 watts allowing for robust operation.
- Maximum drain-source resistance (Rds) is 5.4 milliohms ensuring low conduction losses.
- Typical gate charge is 46 nanocoulombs providing quick switching characteristics.
- Operating temperature is rated up to 150 degrees Celsius supporting demanding environments.
- Physical dimensions include length 10 mm, width 4.5 mm, and height 15 mm.
Product Description
Toshiba TK58A06N1,S4X(S is an N-Channel MOSFET designed for electronic circuit applications requiring high continuous drain current capability of 58 amperes and a maximum drain-source voltage of 60 volts. This component utilizes enhancement mode technology for improved efficiency and fast switching speeds, suitable for power management and switching applications.
Its TO-220 package featuring three pins facilitates through-hole mounting on printed circuit boards, making it apt for repairs, prototypes, and production devices demanding reliable power transistor performance.
The device offers a low maximum drain-source resistance (5.4 milliohms) minimizing conduction losses and heat generation while providing a maximum power dissipation rating of 35 watts to sustain thermal stresses due to load currents. The typical gate charge of 46 nanocoulombs enables rapid switching with low gate drive requirements.
With an operating temperature range supporting up to 150°C, this MOSFET performs reliably in demanding industrial, automotive electronics, consumer electronics power supplies, and manufacturing equipment control systems where robust power transistors are critical.
Physical package dimensions are compact at 10 mm length, 4.5 mm width, and 15 mm height, which allow integration into space-constrained environments without compromising electrical performance.
This MOSFET is used widely in power conversion, motor drivers, and voltage regulation modules. The through-hole TO-220 package design provides easy heat sinking options to maintain device temperature. Maximum gate source voltage ratings of ±20 V ensure gate oxide protection under switching transients.
Manufactured to standards suitable for high reliability electronic equipment. Ideal for engineers working on power electronics, industrial automation, and electronic component replacement projects. Explore more semiconductor components like this in the Electronics & Electricals category on EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is rated at 58 amperes.
This MOSFET has a maximum drain-source voltage rating of 60 volts.
The maximum power dissipation capacity is 35 watts.
The dimensions of the TO-220 package are 10 mm in length, 4.5 mm in width, and 15 mm in height.
The typical gate charge is 46 nanocoulombs.
The maximum drain-source resistance (Rds) is 5.4 milliohms.
The operating temperature is rated up to 150 degrees Celsius.
This model supports through-hole mounting, suitable for PCB integration.
This device is an N-channel MOSFET, designed for enhancement mode operation.
The maximum gate-source voltage ratings are ±20 volts.
This MOSFET is widely used in power conversion, motor drivers, and voltage regulation modules.
The forward voltage is rated at -1.2 volts.
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