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Toshiba N-Channel MOSFET 62A 600V Enhancement Mode 3-Pin TO-247 TK62N60W,S1VF(S

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Toshiba N-Channel MOSFET 62A 600V Enhancement Mode 3-Pin TO-247 TK62N60W,S1VF(S

Name: Toshiba N-Channel MOSFET 62A 600V Enhancement Mode 3-Pin TO-247 TK62N60W,S1VF(S
Brand: Toshiba
SKU: 386026
Price: 8.09 USD
Availability: InStock

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Category MOSFET Brand Toshiba Condition New

Specifications

Country of Origin	China
Brand	Toshiba
Height	20.95mm
Length	15.94mm
Model	TK62N60W,S1VF(S
Width	5.02mm
Mount Type	Through Hole
Series	TK
Maximum Operating Temperature	150°C
Package Type	TO-247
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	62A
Maximum Drain Source Voltage Vds	600V
Maximum Drain Source Resistance Rds	40mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	400W
Typical Gate Charge Qg @ Vgs	180nC
Maximum Gate Source Voltage Vgs	-30, +30V
Forward Voltage Vf	-1.7V

Key Features

This MOSFET operates in enhancement mode with low on-resistance of 40 milliohms.
It delivers a maximum power dissipation of 400 watts for efficient operation.
The device supports a maximum gate-source voltage range of -30 to +30 volts.
Typical gate charge is 180 nanocoulombs at Vgs, enabling fast switching.
Forward voltage drop is -1.7 volts for low conduction losses.
It is rated for a maximum operating temperature of 150 degrees Celsius.
The TO-247 package supports through-hole mounting with three pins.
This MOSFET is suitable for power management in industrial, automotive, and electronic applications.

Product Description

Toshiba TK62N60W,S1VF(S is a high-performance N-Channel MOSFET transistor designed to handle continuous drain currents up to 62 amperes and withstand drain-source voltages of up to 600 volts. Packaged in a TO-247 3-pin format, this device features enhancement mode operation with a low maximum drain-source resistance of 40 milliohms, ensuring efficient conduction characteristics and low power loss.

The MOSFET supports a maximum power dissipation rating of 400 watts, allowing it to perform reliably in demanding thermal environments up to 150°C. It features a maximum gate-source voltage tolerance from -30 to +30 volts and a typical gate charge of 180 nanocoulombs, facilitating fast switching capabilities essential for power electronics.

The device exhibits a forward voltage drop of approximately -1.7 volts, contributing to overall power efficiency in circuits. Its physical dimensions, measuring 20.95 mm in height, 15.94 mm in length, and 5.02 mm in width, fit a standard TO-247 through-hole mount, easing integration into various power management boards and modules.

This MOSFET is ideally suited for industrial electronics, automotive power control systems, power supplies, and other high-current, high-voltage applications requiring solid-state switching and amplification with robust thermal and electrical performance.

Enhancement mode N-Channel MOSFET with 62 A continuous drain current capacity. Rated for 600 V maximum drain-source voltage with low Rds(on) of 40 mΩ. High power dissipation capability of 400 W at elevated temperatures. Wide gate-source voltage tolerance range of -30 V to +30 V.

Fast switching with typical gate charge of 180 nC at Vgs. Forward voltage drop is approximately -1.7 V to minimize conduction losses. Compact TO-247 3-pin package for easy through-hole mounting. Operating temperature up to 150°C for demanding industrial environments.

Manufactured in China with adherence to quality standards. Explore additional Toshiba semiconductor and MOSFET products on EnvMart for your industrial and electronic component requirements.