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Infineon OptiMOS P Type P-Channel MOSFET 1.5 A 30 V Enhancement Mode Surface Mount SOT-23 BSS314PEH6327XTSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.3mm |
| Length | 2.9mm |
| Model | BSS314PEH6327XTSA1 |
| Width | 0.1mm |
| Mount Type | Surface |
| Series | OptiMOS P |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 1.5A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 230mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 500mW |
| Typical Gate Charge Qg @ Vgs | 2.9nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.1V |
Key Features
- Utilizes OptiMOS P Series technology for enhanced electrical performance.
- Type P channel enhancement mode device designed for low voltage power control applications.
- Maximum continuous drain current of 1.5 A suitable for moderate current paths.
- Low Rds(on) of 230 mΩ for efficient conduction in small load scenarios.
- Typical gate charge of 2.9 nC reduces switching energy losses effectively.
- Wide operating temperature range from -55°C to 150°C for harsh industrial environments.
- Maximum power dissipation rating of 500 mW requiring appropriate thermal management.
- Automotive AEC-Q101 qualification ensures high reliability in vehicle-grade applications.
Product Description
Infineon BSS314PEH6327XTSA1 is a P-Channel MOSFET from the OptiMOS P Series designed for surface mount applications. It supports a continuous drain current of 1.5 A and withstands a maximum drain-source voltage of 30 V, making it suitable for low-voltage power switching in automotive and industrial electronics.
Constructed for enhancement mode operation, this device provides controlled conduction ideal for power-path switching and load control tasks. Its low Rds(on) value of 230 mΩ enables efficient operation with minimal conduction losses for small loads.
The MOSFET features a typical gate charge of 2.9 nC, which facilitates reduced switching energy loss and improved efficiency in fast-switching power circuits. Its electrical limits include a maximum gate-source voltage of ±20 V, providing sufficient design margin for various gate drive configurations. The forward voltage drop is specified at -1.1 V.
Qualified per the automotive AEC-Q101 standard, the MOSFET meets stringent quality and performance criteria for automotive applications. The device supports a wide operating temperature range from -55°C to 150°C, ensuring reliable performance even at thermal extremes frequently encountered in industrial and automotive environments.
Its compact SOT-23 3-pin surface mount package enables automated assembly on densely populated printed circuit boards, supporting miniaturization efforts in electronics design. OptiMOS P Series enhances switching performance and efficiency.
Low-voltage switching suitable for load management and power rails in handheld electronics. Automotive grade reliability via AEC-Q101 certification. Compact form factor minimizes board space usage. Moderate power dissipation requires effective thermal layout on PCB.
This MOSFET is ideal for battery management circuits, automotive control modules, sensor node switching, and portable electronic devices requiring efficient power control. Its robust specifications and package form suit demanding industrial and automotive design requirements.
For additional MOSFET solutions and detailed technical documents, explore related products in the EnvMart catalog.
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Frequently Asked Questions
The maximum continuous drain current of this model is 1.5 A, making it suitable for moderate current paths in low-voltage applications.
It can withstand a maximum drain-source voltage of 30 V, which is ideal for low-voltage power switching applications.
The maximum drain-source resistance (Rds(on)) is 230 mΩ, allowing for efficient conduction in small load scenarios.
The typical gate charge is 2.9 nC, which helps reduce switching energy losses effectively in fast-switching power circuits.
It operates within a wide temperature range from -55°C to 150°C, suitable for harsh industrial environments.
The MOSFET comes in a compact SOT-23 surface mount package, which is advantageous for automated assembly on PCBs.
This model is qualified per the automotive AEC-Q101 standard, ensuring high reliability for automotive applications.
The maximum power dissipation rating is 500 mW, which requires appropriate thermal management during operation.
The forward voltage drop is specified at -1.1 V, which is relevant for its conduction characteristics.
This device features a 3-pin configuration, suitable for various circuit designs.
This model utilizes a Type P channel, designed for enhancement mode operation, which is ideal for power-path switching.
The dimensions of this model are 2.9 mm in length, 0.1 mm in width, and 1.3 mm in height, making it compact for PCB applications.
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