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Infineon N-Channel IGBT 40 A 600 V, 3-Pin TO-247 Through Hole IKW20N60H3FKSA1

Category IGBT Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Model IKW20N60H3FKSA1
Mount Type Through Hole
Series TrenchStop
Energy Rating 1.07mJ
Maximum Operating Temperature 175°C
Package Type TO-247
Minimum Operating Temperature -40°C
Standards/Approvals RoHS, JEDEC
Pin Count 3
Maximum Continuous Collector Current Ic 40A
Maximum Collector Emitter Voltage Vceo 600V
Maximum Collector Emitter Saturation Voltage VceSAT 2.5V
Channel Type N
Maximum Power Dissipation Pd 170W
Maximum Gate Emitter Voltage VGEO ±20 V

Key Features

  • Employs TrenchStop technology for low on-state voltage drop enhancing efficiency.
  • Maximum junction temperature rating of 175 degrees Celsius ensures reliable operation.
  • Soft, fast recovery anti-parallel diode improves switching reliability.
  • Switching speed of 100kHz suited for high-frequency power electronics applications.
  • Supports pulsed collector current up to 80A and power dissipation of 170W for robust short circuit tolerance.
  • Thermal resistance junction-to-case of 0.88 K/W facilitates effective heat dissipation.
  • Package dimensions are 16.13 x 5.21 x 21.1 mm fitting standard TO-247 mounts.
  • Meets RoHS and JEDEC standards for quality and compliance.

Product Description

Infineon IKW20N60H3FKSA1 is a high-performance N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for demanding power electronics applications. It supports a maximum continuous collector current of 40 amperes and can withstand a maximum collector-emitter voltage of 600 volts, housed in a robust 3-pin TO-247 through-hole package measuring 16.13 x 5.21 x 21.1 mm.

Equipped with TrenchStop technology, this IGBT offers a low collector-emitter saturation voltage of 2.5 V, minimizing conduction losses and improving overall efficiency. The transistor boasts a maximum junction temperature up to 175°C, ensuring reliable function under high thermal loads. An integrated soft, fast recovery anti-parallel diode enhances switching performance and device reliability in high-frequency operation.

The device achieves switching speeds up to 100 kHz, making it suitable for applications such as uninterruptible power supplies, welding converters, and high-frequency converters. It supports pulsed collector currents up to 80 A and power dissipation capabilities of 170 W, allowing operation in short circuit conditions with safe operating times of up to 5 microseconds, and can withstand up to 1000 short circuits.

Thermal management is optimized with a junction-to-case thermal resistance of 0.88 K/W ensuring effective heat dissipation. The maximum gate-emitter voltage rating is ±20 V, and the device operates reliably down to a minimum temperature of -40°C. The IKW20N60H3FKSA1 complies with RoHS and JEDEC standards, guaranteeing quality and industry compliance.

Employs TrenchStop technology for reduced on-state voltage and power loss. High maximum operating temperature of 175°C for robust industrial use. Soft recovery diode enhances high-speed switching reliability. Switching frequency capability up to 100 kHz for efficient power conversion.

Supports high pulsed current of 80A and power dissipation of 170W. Compact, industry-standard TO-247 package for easy mounting. Conforms to RoHS and JEDEC standards ensuring environmental and quality compliance.

This IGBT is ideal for industrial and commercial power electronics including HVAC systems, manufacturing equipment, welding applications, and uninterruptible power supplies. Its durable construction and reliable performance metrics make it an effective choice for engineering solutions requiring high current and voltage handling in a compact footprint.

Explore more semiconductor and power management components in the Electronics & Electricals category at EnvMart.

Infineon N-Channel IGBT 40 A 600 V, 3-Pin TO-247 Through Hole IKW20N60H3FKSA1
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Frequently Asked Questions

The maximum continuous collector current for this model is 40 amperes.

It can withstand a maximum collector-emitter voltage of 600 volts.

The IKW20N60H3FKSA1 has a switching speed of up to 100 kHz, making it suitable for high-frequency applications.

The thermal resistance junction-to-case is 0.88 K/W, which helps facilitate effective heat dissipation.

The package dimensions are 16.13 x 5.21 x 21.1 mm, fitting standard TO-247 mounts.

It supports a maximum power dissipation of 170 watts, allowing for robust operation under load.

The minimum operating temperature is -40°C, ensuring reliable function in low-temperature environments.

It complies with RoHS and JEDEC standards, ensuring quality and environmental compliance.

The maximum gate-emitter voltage rating is ±20 V.

This model is suitable for applications such as uninterruptible power supplies, welding converters, and high-frequency converters.

It features a soft, fast recovery anti-parallel diode that enhances switching reliability.

It employs TrenchStop technology, which reduces the on-state voltage drop and enhances efficiency.

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