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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IKW20N60H3FKSA1 |
| Mount Type | Through Hole |
| Series | TrenchStop |
| Energy Rating | 1.07mJ |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -40°C |
| Standards/Approvals | RoHS, JEDEC |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 40A |
| Maximum Collector Emitter Voltage Vceo | 600V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.5V |
| Channel Type | N |
| Maximum Power Dissipation Pd | 170W |
| Maximum Gate Emitter Voltage VGEO | ±20 V |
Infineon IKW20N60H3FKSA1 is a high-performance N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for demanding power electronics applications. It supports a maximum continuous collector current of 40 amperes and can withstand a maximum collector-emitter voltage of 600 volts, housed in a robust 3-pin TO-247 through-hole package measuring 16.13 x 5.21 x 21.1 mm.
Equipped with TrenchStop technology, this IGBT offers a low collector-emitter saturation voltage of 2.5 V, minimizing conduction losses and improving overall efficiency. The transistor boasts a maximum junction temperature up to 175°C, ensuring reliable function under high thermal loads. An integrated soft, fast recovery anti-parallel diode enhances switching performance and device reliability in high-frequency operation.
The device achieves switching speeds up to 100 kHz, making it suitable for applications such as uninterruptible power supplies, welding converters, and high-frequency converters. It supports pulsed collector currents up to 80 A and power dissipation capabilities of 170 W, allowing operation in short circuit conditions with safe operating times of up to 5 microseconds, and can withstand up to 1000 short circuits.
Thermal management is optimized with a junction-to-case thermal resistance of 0.88 K/W ensuring effective heat dissipation. The maximum gate-emitter voltage rating is ±20 V, and the device operates reliably down to a minimum temperature of -40°C. The IKW20N60H3FKSA1 complies with RoHS and JEDEC standards, guaranteeing quality and industry compliance.
Employs TrenchStop technology for reduced on-state voltage and power loss. High maximum operating temperature of 175°C for robust industrial use. Soft recovery diode enhances high-speed switching reliability. Switching frequency capability up to 100 kHz for efficient power conversion.
Supports high pulsed current of 80A and power dissipation of 170W. Compact, industry-standard TO-247 package for easy mounting. Conforms to RoHS and JEDEC standards ensuring environmental and quality compliance.
This IGBT is ideal for industrial and commercial power electronics including HVAC systems, manufacturing equipment, welding applications, and uninterruptible power supplies. Its durable construction and reliable performance metrics make it an effective choice for engineering solutions requiring high current and voltage handling in a compact footprint.
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