Nexperia P-Channel Trench MOSFET, 3.5 A, 20 V, Enhancement Mode, 3-Pin SOT-23 PMV48XP,215

Nexperia PMV48XP,215 is a P-Channel Trench MOSFET designed for efficient switching applications requiring up to 3.5 A continuous drain current and a maximum drain-source voltage rating of 20 V. It operates in enhancement mode and is packaged in a compact 3-pin SOT-23 surface mount package, making it suitable for space-constrained electronics designs.

The MOSFET features a low on-resistance of 81 mΩ, contributing to reduced conduction losses and improved thermal performance. It supports a maximum power dissipation of 930 mW and typical gate charge of 8.5 nC, enabling fast switching suitable for power management circuits.

This device is designed to operate across a broad temperature range from -55°C up to 150°C, maintaining reliability under demanding industrial and consumer electronics environments. The maximum gate-source voltage is ±12 V, providing robustness against voltage spikes.

Its small dimensions (3 mm length, 1.4 mm width, 1 mm height) and surface mount package type facilitate easy board assembly and integration into compact circuits. Compliance with IEC 60134 standards ensures quality and performance consistency.

Nexperia PMV48XP,215 MOSFET is typically used in electronic circuits for power switching, load switching, and amplification in applications spanning telecommunications, automotive electronics, and general consumer electronics.

The MOSFET operates at a maximum drain-source voltage of 20 V. Features low on-resistance of 81 milliohms for efficient power conduction. Capable of continuous drain current up to 3.5 A. Surface mountable 3-pin SOT-23 package for compact designs.

Typical gate charge of 8.5 nanocoulombs enabling fast switching. Wide operating temperature range from -55°C to 150°C. Maximum power dissipation of 930 milliwatts supports varied load conditions. Compliant with IEC 60134 standard for durability and safety.

Manufactured in China under strict quality controls. Explore EnvMart's extensive range of semiconductor components and power MOSFETs for reliable and high-performance electronic design solutions.