Infineon OptiMOS 2 N-Channel MOSFET, 69 A, 100 V Enhancement Mode, 3-Pin TO-220 IPP12CN10LGXKSA1

Infineon IPP12CN10LGXKSA1 is part of the OptiMOS™ 2 power MOSFET family, delivering industry-leading low on-state resistance within its voltage class. This N-channel enhancement mode MOSFET in a 3-pin TO-220 package is suitable for a wide range of applications including power management, server power supplies, solar inverters, telecom equipment, and datacom systems.

The device supports a maximum continuous drain current of 69 amperes and withstands drain-source voltages up to 100 volts. Its on-resistance of 15.8 milliohms ensures efficient power switching, reducing conduction losses and improving overall system efficiency.

With a maximum power dissipation rating of 125 watts and operating temperature range from -55°C to 175°C, this MOSFET is ideal for demanding industrial and commercial environments. The typical gate charge of 58 nC supports high frequency switching performance. The gate-source voltage rating of ±20 V provides flexibility and robust gate drive capabilities.

The TO-220 through-hole package facilitates easy mounting and integration into power electronic circuits. Precise package dimensions are 15.95 mm in height, 10.36 mm in length and 4.57 mm in width, allowing seamless compatibility with standard heatsinks and PCB layouts.

Infineon OptiMOS 2 devices meet stringent quality requirements but do not have additional regulatory or automotive standards compliance. The comprehensive portfolio from Infineon includes products optimized for power density, efficiency, and cost-effectiveness in electronic designs.

Supports a maximum continuous drain current of 69 amperes. Maximum drain-source voltage rating is 100 volts. Features low on-resistance of 15.8 milliohms, enhancing efficiency. Designed with a 3-pin TO-220 through-hole package for easy mounting.

Channel operates in enhancement mode for optimal switching control. Maximum power dissipation rating of 125 watts for reliable thermal handling. Wide operating temperature range from -55°C up to 175°C for harsh environments.

Typical gate charge is 58 nanocoulombs at gate-source voltage, enabling fast switching. Gate-source voltage range is ±20 volts ensuring robust gate drive conditions. Package dimensions approximately 15.95 mm height, 10.36 mm length, and 4.57 mm width.

Ideal for industrial, telecommunications, datacom, solar energy, and server power supply applications. Explore more Infineon semiconductor devices on EnvMart for your design and manufacturing needs.