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Infineon OptiMOS 5 N-Channel MOSFET 180A 60V Enhancement 7-Pin TO-263 IPB010N06NATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 9.45mm |
| Length | 10.31mm |
| Model | IPB010N06NATMA1 |
| Width | 4.57mm |
| Mount Type | Surface |
| Series | OptiMOS 5 |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 7 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 180A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 1.5mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 300W |
| Typical Gate Charge Qg @ Vgs | 208nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.2V |
Key Features
- Features a 7-pin TO-263 surface mount package for compact PCB integration.
- Provides low on-resistance of 1.5 milliohms for efficient power switching.
- Supports maximum power dissipation of 300 watts for sustained thermal performance.
- Operates reliably across a wide temperature range from -55°C to 175°C.
- Typical gate charge is 208 nanocoulombs ensuring predictable switching behavior.
- Maximum gate-source voltage rating of ±20 volts protects the gate from damage.
- Forward diode voltage drop approximately 1.2V for loss calculations in reverse conduction.
- Suitable for high-current DC-DC converters and telecom power distribution modules.
Product Description
Infineon IPB010N06NATMA1 is an OptiMOS 5 series N-Channel MOSFET designed for high current power switching applications requiring efficient conduction and robust thermal handling. Featuring a 7-pin TO-263 surface-mount package, this device supports a continuous drain current of 180 amperes and a maximum drain-source voltage rating of 60 volts.
Its low drain-source on-resistance of 1.5 milliohms minimizes conduction losses which is critical in high current paths, enabling enhanced efficiency in power conversion and motor control applications.
Designed to operate reliably across a broad temperature spectrum of -55°C to 175°C, this MOSFET is suitable for demanding electrical environments including industrial electronics, server power modules, battery management, and telecommunications equipment. The typical gate charge of 208 nanocoulombs allows for predictable switching characteristics, easing driver design requirements, while the maximum gate-source voltage of ±20 volts safeguards the gate oxide integrity.
The device also features a forward diode voltage drop of approximately 1.2 volts during body-diode conduction, important for loss analysis in circuits with reverse current events. With a maximum power dissipation rating of 300 watts, it efficiently sustains thermal loads common in robust industrial and commercial power stages.
This MOSFET supports surface mount assembly and soldering, aligning with modern automated PCB manufacturing processes. It finds application in high-current DC-DC converters, motor controllers, and general purpose power stages requiring high efficiency and reliable operation.
7-pin TO-263 package for surface mount use. 180A continuous drain current at 60V drain voltage. Low 1.5mΩ Rds(on) for high efficiency. Wide operating temperature range of -55°C to 175°C. 208nC gate charge for predictable switching.
±20V maximum gate-source voltage rating. 300W maximum power dissipation for sustained load. Forward voltage drop of 1.2V for body diode conduction. Suited for telecom, industrial, motor control, and power management applications.
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Frequently Asked Questions
The maximum continuous drain current for this model is 180 amperes.
This MOSFET has a maximum drain-source voltage rating of 60 volts.
It features a low drain-source on-resistance of 1.5 milliohms, which minimizes conduction losses.
The typical gate charge is 208 nanocoulombs, allowing for predictable switching characteristics.
It operates reliably across a wide temperature range from -55°C to 175°C.
This model supports a maximum power dissipation of 300 watts for sustained thermal performance.
It comes in a 7-pin TO-263 surface mount package suitable for compact PCB integration.
The forward voltage drop is approximately 1.2 volts during body-diode conduction.
The maximum gate-source voltage rating is ±20 volts, which protects the gate from damage.
It is suitable for high-current DC-DC converters, motor controllers, and telecommunications power distribution modules.
The dimensions are 10.31mm in length, 4.57mm in width, and 9.45mm in height.
This model is an N-channel MOSFET designed for enhancement mode operation.
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