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Toshiba TK N-Channel MOSFET, 20 A, 600 V Enhancement Mode, TO-247 Package TK20N60W,S1VF(S
Specifications
| Country of Origin | China |
|---|---|
| Brand | Toshiba |
| Height | 20.95mm |
| Length | 15.94mm |
| Model | TK20N60W,S1VF(S |
| Width | 5.02mm |
| Mount Type | Through Hole |
| Series | TK |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 20A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 155mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 165W |
| Typical Gate Charge Qg @ Vgs | 48nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | -1.7V |
Key Features
- This MOSFET features an enhancement channel mode for efficient switching.
- It has a TO-247 through-hole package with 3 pins for secure mounting.
- The device supports a maximum power dissipation of 165 W for reliable operation.
- Operating temperature ranges from -55°C to 150°C, suitable for industrial environments.
- Forward voltage is -1.7 V with a typical gate charge of 48 nC at 30 V gate-source voltage.
- It has a low maximum drain-source resistance of 155 mΩ to optimize power losses.
- The maximum gate-source voltage tolerance is between -30 V and +30 V for flexible control.
- Physical dimensions include length 15.94 mm, width 5.02 mm, and height 20.95 mm.
Product Description
The Toshiba TK20N60W,S1VF(S is an N-Channel Power MOSFET designed for industrial and commercial electronic applications requiring high efficiency and power handling.
This enhancement mode MOSFET supports a maximum continuous drain current of 20 A and a drain-source voltage of 600 V, making it suitable for power switching and amplification tasks.
Constructed with a TO-247 package and 3 pins, it allows through-hole mounting for robust mechanical and thermal stability. The MOSFET's maximum power dissipation rating of 165 W ensures reliable thermal management in demanding environments.
The device operates reliably in a wide temperature range from -55°C to 150°C, fulfilling stringent industrial temperature and reliability standards. It features a maximum drain-source resistance of 155 milliohms to minimize conduction losses and improve overall system efficiency.
The typical gate charge is 48 nC at a gate-source voltage of 30 V, facilitating efficient switching performance in power electronics circuits. Its gate-source voltage rating ranges between -30 V to +30 V, allowing flexible control across a variety of electronic designs.
This MOSFET is ideal for industrial drivers, power supplies, motor controllers, and other high-power semiconductor applications. Its physical dimensions of 15.94 mm length, 5.02 mm width, and 20.95 mm height enable easy integration into standard heat sinks and circuit boards.
The device is manufactured in China, meeting rigorous quality assurance protocols. This product is offered new and is ready for assembly and use in high-demand electronic systems.
Designed for applications in electronics manufacturing, power management solutions, automotive circuits, and industrial controls, the Toshiba TK20N60W,S1VF(S MOSFET ensures combined performance and durability.
Explore more high-quality MOSFET components and power semiconductors in the EnvMart catalog for engineering and industrial applications.
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Frequently Asked Questions
The maximum continuous drain current for this model is 20 A.
It supports a maximum drain-source voltage of 600 V.
This model has a maximum power dissipation rating of 165 W.
The dimensions are 15.94 mm in length, 5.02 mm in width, and 20.95 mm in height.
The typical gate charge is 48 nC at a gate-source voltage of 30 V.
The maximum gate-source voltage tolerance is between -30 V and +30 V.
It has a maximum drain-source resistance of 155 mΩ.
The operating temperature range is from -55°C to 150°C.
The TO-247 package has 3 pins for secure mounting.
This model utilizes an N-channel type for its operation.
It is suitable for industrial drivers, power supplies, motor controllers, and high-power semiconductor applications.
It supports through-hole mounting for robust mechanical and thermal stability.
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