Toshiba DTMOSIV N-Channel MOSFET, 15.8 A, 600 V Enhancement Mode, 3-Pin TO-3P Package TK16J60W,S1VQ(O

The Toshiba TK16J60W,S1VQ(O is a high-performance DTMOSIV N-Channel MOSFET transistor designed for reliable power switching and amplification in industrial and electronic applications. Featuring a maximum continuous drain current of 15.8 A and a robust 600 V drain-source voltage rating, this device operates in enhancement mode and utilizes a 3-pin TO-3P package which facilitates through-hole mounting, suitable for robust PCB designs.

This MOSFET offers a low on-resistance of 190 milliohms, which reduces conduction losses and improves efficiency in power conversion circuits. Its typical gate charge of just 38 nC enables fast switching cycles, making it ideal for power supplies, motor drivers, and amplifiers requiring high efficiency and low heat dissipation.

With a maximum power dissipation capability of 130 W and a maximum operating temperature of 150°C, the TK16J60W,S1VQ(O device is well-suited for demanding industrial environments, including HVAC, manufacturing equipment, and automotive electrical systems, although it does not comply with automotive-specific standards. The 3-pin configuration and standard TO-3P form factor ensure compatibility with established assembly processes.

The product's compact size with dimensions of 15.5 mm length, 4.5 mm width, and 20 mm height contributes to space-efficient electronic designs. Its maximum gate-source voltage tolerance from -30 V to +30 V further enhances circuit stability and performance.

Manufactured in Japan by Toshiba, this MOSFET transistor embodies high-quality semiconductor technology, catering to applications requiring dependable power management with long-term reliability.

Maximum continuous drain current: 15.8 A. Maximum drain-source voltage: 600 V. Low drain-source resistance of 190 mΩ. Typical gate charge of 38 nC for efficient switching. Power dissipation up to 130 W. Wide gate-source voltage range of -30 V to +30 V.

Operating temperature up to 150°C. Through-hole mount with 3-pin TO-3P package. Compact dimensions: 15.5 mm x 4.5 mm x 20 mm. Made in Japan for quality assurance.

This Toshiba MOSFET is broadly applicable across electronic, industrial, and manufacturing sectors, including power supply design, motor control, and high-efficiency switching circuits, delivering dependable semiconductor performance. Explore more power semiconductor products and MOSFET components at EnvMart for your industrial and electronic design needs.

Explore more products in our MOSFETs category.