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| Country of Origin | Malaysia |
|---|---|
| Brand | Toshiba |
| Height | 15mm |
| Length | 10mm |
| Model | TK20A60W5,S5VX(M |
| Width | 4.5mm |
| Mount Type | Through Hole |
| Series | TK |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 20A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 175mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 45W |
| Typical Gate Charge Qg @ Vgs | 55nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | -1.7V |
Toshiba TK20A60W5,S5VX(M) is a high-performance N-Channel Enhancement Mode MOSFET designed for efficient switching and power management applications. Rated for a maximum continuous drain current of 20 amperes and a drain-source voltage of 600 volts, this device is suitable for a variety of electronic circuits requiring robust and reliable semiconductor components.
The device features a TO-220 package with through-hole mounting and 3 pins, enabling straightforward PCB integration and heat dissipation. Its low maximum drain-source resistance of 175 milliohms ensures minimal conduction losses, contributing to improved system efficiency and thermal management.
Typical gate charge of 55 nanocoulombs at a gate-source voltage of 5 V facilitates fast switching speeds, making it ideal for power conversion and motor control scenarios in industrial, automotive, and consumer electronics fields. It operates safely within gate-source voltage limits of -30 V to +30 V and withstands maximum operating temperatures up to 150°C, enhancing durability under demanding conditions.
Physically compact with dimensions of 15 mm in height, 10 mm in length, and 4.5 mm in width, this MOSFET accommodates space-constrained designs without compromising performance. It does not carry automotive-specific certifications but is manufactured in Malaysia, assuring quality manufacture under established standards.
Supports a continuous drain current of 20 amperes. Maximum drain-source voltage rating of 600 volts. TO-220 package with 3-pin through-hole mounting. Maximum power dissipation of 45 watts. Low drain-source resistance of 175 milliohms.
Typical gate charge of 55 nanocoulombs at Vgs = 5V. Gate-source voltage range up to ±30 volts. Operating temperature maximum 150°C. Compact physical dimensions for versatile applications. Manufactured in Malaysia, ensuring quality standards.
This Toshiba TK series MOSFET is widely used in industrial electronics, power electronics, HVAC systems, motor drives, and laboratory equipment, providing reliable performance for switching and amplification tasks. For more industrial-grade semiconductor components, explore the Electronics & Electricals category at EnvMart.
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