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Toshiba N-Channel Enhancement MOSFET, 20 A Continuous Drain Current, 600 V Drain Source Voltage, TO-220 TK20A60W5,S5VX(M

Category MOSFET Brand Toshiba Condition New

Specifications

Country of Origin Malaysia
Brand Toshiba
Height 15mm
Length 10mm
Model TK20A60W5,S5VX(M
Width 4.5mm
Mount Type Through Hole
Series TK
Maximum Operating Temperature 150°C
Package Type TO-220
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 20A
Maximum Drain Source Voltage Vds 600V
Maximum Drain Source Resistance Rds 175mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 45W
Typical Gate Charge Qg @ Vgs 55nC
Maximum Gate Source Voltage Vgs -30, +30V
Forward Voltage Vf -1.7V

Key Features

  • Supports a continuous drain current of 20 amperes.
  • Maximum drain-source voltage rating of 600 volts.
  • Comes in a TO-220 through-hole package with 3 pins.
  • Features a low maximum drain-source resistance of 175 milliohms.
  • Capable of dissipating up to 45 watts of power.
  • Typical gate charge is 55 nanocoulombs at 5 volts Vgs.
  • Operates within a temperature range up to 150 degrees Celsius.
  • Maximum gate-source voltage is ±30 volts.

Product Description

Toshiba TK20A60W5,S5VX(M) is a high-performance N-Channel Enhancement Mode MOSFET designed for efficient switching and power management applications. Rated for a maximum continuous drain current of 20 amperes and a drain-source voltage of 600 volts, this device is suitable for a variety of electronic circuits requiring robust and reliable semiconductor components.

The device features a TO-220 package with through-hole mounting and 3 pins, enabling straightforward PCB integration and heat dissipation. Its low maximum drain-source resistance of 175 milliohms ensures minimal conduction losses, contributing to improved system efficiency and thermal management.

Typical gate charge of 55 nanocoulombs at a gate-source voltage of 5 V facilitates fast switching speeds, making it ideal for power conversion and motor control scenarios in industrial, automotive, and consumer electronics fields. It operates safely within gate-source voltage limits of -30 V to +30 V and withstands maximum operating temperatures up to 150°C, enhancing durability under demanding conditions.

Physically compact with dimensions of 15 mm in height, 10 mm in length, and 4.5 mm in width, this MOSFET accommodates space-constrained designs without compromising performance. It does not carry automotive-specific certifications but is manufactured in Malaysia, assuring quality manufacture under established standards.

Supports a continuous drain current of 20 amperes. Maximum drain-source voltage rating of 600 volts. TO-220 package with 3-pin through-hole mounting. Maximum power dissipation of 45 watts. Low drain-source resistance of 175 milliohms.

Typical gate charge of 55 nanocoulombs at Vgs = 5V. Gate-source voltage range up to ±30 volts. Operating temperature maximum 150°C. Compact physical dimensions for versatile applications. Manufactured in Malaysia, ensuring quality standards.

This Toshiba TK series MOSFET is widely used in industrial electronics, power electronics, HVAC systems, motor drives, and laboratory equipment, providing reliable performance for switching and amplification tasks. For more industrial-grade semiconductor components, explore the Electronics & Electricals category at EnvMart.

Toshiba N-Channel Enhancement MOSFET, 20 A Continuous Drain Current, 600 V Drain Source Voltage, TO-220 TK20A60W5,S5VX(M
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Frequently Asked Questions

The maximum continuous drain current of this MOSFET is 20 amperes.

This model has a maximum drain-source voltage rating of 600 volts.

It can dissipate up to 45 watts of power.

The dimensions are 15 mm in height, 10 mm in length, and 4.5 mm in width.

The maximum gate-source voltage is ±30 volts.

The typical gate charge is 55 nanocoulombs at a gate-source voltage of 5 volts.

It comes in a TO-220 package with a through-hole mounting type and 3 pins.

The maximum drain-source resistance is 175 milliohms.

This device features an N-channel enhancement mode.

The maximum operating temperature is 150 degrees Celsius.

This MOSFET is manufactured in Malaysia.

It is suitable for power conversion, motor control, and various electronic circuits in industrial, automotive, and consumer electronics fields.

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