$2.12
$2.06
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
Toshiba TK N-Channel MOSFET 20 A 600 V Enhancement Mode 3-Pin TO-220 TK20A60W,S5VX(M
Specifications
| Country of Origin | Malaysia |
|---|---|
| Brand | Toshiba |
| Height | 15mm |
| Length | 10mm |
| Model | TK20A60W,S5VX(M |
| Width | 4.5mm |
| Mount Type | Through Hole |
| Series | TK |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 20A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 155mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 45W |
| Typical Gate Charge Qg @ Vgs | 48nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | -1.7V |
Key Features
- This MOSFET is designed for high power switching applications.
- Features enhancement mode channel for efficient operation.
- Through-hole mount type with 3-pin configuration for easy PCB integration.
- Maximum power dissipation of 45W suitable for industrial and electronic equipment use.
- Operating temperature ranges from -55°C to 150°C ensuring reliability under extreme conditions.
- Low typical gate charge enhances switching speed and efficiency.
- Package dimensions approximately 15mm height, 10mm length, and 4.5mm width provide compact form factor.
- Originates from Malaysia ensuring quality manufacturing standards.
Product Description
Toshiba TK20A60W,S5VX(M N-Channel MOSFET is a discrete semiconductor designed for power switching and amplification in industrial, electronic, and manufacturing applications. Operating at a maximum continuous drain current of 20 amperes and a drain-source voltage of 600 volts, this enhancement-mode transistor delivers efficient performance in demanding circuits.
Featuring a robust TO-220 package with three pins, it is specifically built for through-hole mounting, making it suitable for PCB assembly and repair tasks. The device supports a maximum power dissipation of 45 watts, allowing it to handle significant power loads without compromising safety or durability.
This MOSFET operates reliably across a wide temperature range from -55°C to 150°C, meeting industry standards for durable components used in automotive, laboratory, and industrial environments. Its typical gate charge of 48 nanocoulombs at Vgs enables rapid switching with minimal energy loss.
The maximum gate source voltage ranges from -30 to +30 volts, and the device maintains a low forward voltage of approximately -1.7 volts. With dimensions measuring 15 mm height, 10 mm length, and 4.5 mm width, it provides a compact footprint suitable for dense electronic assemblies.
Designed for use in power electronics, switching devices, and amplification circuits. Suitable for industrial, commercial, and electronic component manufacturing sectors. Ideal for applications requiring high current and high voltage tolerance.
Through-hole mounting facilitates easy installation and replacement in circuits. Compact TO-220 package supports efficient thermal management and robustness. Explore more discrete semiconductor devices and MOSFETs at EnvMart for high-quality electronic components tailored to complex electrical systems.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum continuous drain current for this model is 20 amperes.
It can handle a maximum drain-source voltage of 600 volts.
The typical gate charge is 48 nanocoulombs at Vgs.
The package dimensions are approximately 15 mm in height, 10 mm in length, and 4.5 mm in width.
The maximum power dissipation for this MOSFET is 45 watts.
It operates reliably across a temperature range from -55°C to 150°C.
This model uses a through-hole mounting type, making it suitable for PCB assembly.
It features an N-channel type configuration.
The maximum gate-source voltage ranges from -30 to +30 volts.
It is designed for high power switching applications in industrial, electronic, and manufacturing sectors.
The forward voltage is approximately -1.7 volts.
The maximum drain-source resistance is 155 milliohms.
Related Products
$23.16
$20.22
-12.7%
Other Products from this brand
$2.77
$2.69
-3%
New
$0.22
$0.21
-3%
New
Recently Viewed Products
$127.22
$123.40
-3%
New
$2.12
$2.06
Save 3%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent