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onsemi N-Channel IGBT 40 A 650 V 3-Pin TO-3PN Through Hole FGA40N65SMD
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Model | FGA40N65SMD |
| Mount Type | Through Hole |
| Series | Field Stop |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-3PN |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 40A |
| Maximum Collector Emitter Voltage Vceo | 650V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.5V |
| Channel Type | N |
| Maximum Power Dissipation Pd | 349W |
| Maximum Gate Emitter Voltage VGEO | 20 V |
| onsemi FGA20N120FTDTU IGBT, 40 A 1200 V, 3-Pin TO-3PN, Through HoleBrand | onsemi |
Key Features
- Maximum continuous collector current of 40 A ensures robust performance.
- Supports maximum collector emitter voltage up to 650 V.
- Maximum power dissipation rating of 349 W for reliable thermal management.
- TO-3PN package type with through-hole mounting facilitates easy installation.
- Three-pin configuration offers straightforward interfacing to circuits.
- Maximum gate emitter voltage rating of 20 V for optimal control.
- Maximum collector emitter saturation voltage of 2.5 V minimizes power loss during switching.
- Operates reliably within a wide temperature range from -55°C to 175°C.
Product Description
onsemi FGA40N65SMD N-Channel Insulated Gate Bipolar Transistor (IGBT) is a three-terminal power semiconductor device combining MOSFET-like gate drive with bipolar transistor current handling. It is optimized for efficient and fast switching in power electronic applications.
This IGBT is manufactured in a TO-3PN package with three pins designed for through-hole mounting on printed circuit boards. It is specifically built to handle a maximum continuous collector current of 40 A and withstand collector emitter voltages up to 650 V, supporting demanding power switching requirements.
The maximum power dissipation rating of 349 W ensures effective heat management, even under intensive operation. The maximum gate emitter voltage is rated at 20 V, allowing robust control without damaging gate insulation. Its low collector emitter saturation voltage of 2.5 V reduces conduction losses, improving overall efficiency.
The device is guaranteed to operate reliably in harsh conditions, with a minimum operating temperature of -55°C and a maximum of 175°C, making it suitable for industrial and power management use cases including motor drives, inverters, and power supplies.
As a discrete IGBT transistor produced by onsemi, this component is suitable for industrial, manufacturing, and electrical applications requiring efficient power switching. The Field Stop series technology enhances switching speed and efficiency.
Maximum continuous collector current of 40 A. Collector emitter voltage up to 650 V. Power dissipation of 349 W for effective thermal management. TO-3PN package with through hole mounting. Gate emitter voltage maximum of 20 V.
Low collector emitter saturation voltage of 2.5 V. Operating temperature range from -55°C to 175°C. 3-pin configuration for simple connection. Field stop series transistor. Non-automotive standard component. Explore more semiconductor and IGBT devices on EnvMart to find compatible power electronics components optimized for your industrial applications.
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Frequently Asked Questions
The maximum continuous collector current of this IGBT is 40 A, ensuring robust performance in power applications.
It can withstand a maximum collector emitter voltage of 650 V, making it suitable for high-voltage applications.
The maximum power dissipation rating is 349 W, which aids in effective thermal management during operation.
This model features a TO-3PN package type designed for through-hole mounting, facilitating easy installation on printed circuit boards.
The maximum gate emitter voltage is rated at 20 V, allowing for robust control without risking gate insulation damage.
The maximum collector emitter saturation voltage is 2.5 V, which helps minimize power loss during switching.
It operates reliably within a wide temperature range from -55°C to 175°C, suitable for harsh conditions.
This model has a three-pin configuration, offering straightforward interfacing to circuits.
This IGBT is part of the Field Stop series, which enhances switching speed and efficiency.
It is suitable for industrial and power management applications, including motor drives, inverters, and power supplies.
The country of origin for this IGBT is India.
This model features an N-channel configuration, which is typical for IGBTs used in power electronics.
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