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onsemi UniFET N-Channel MOSFET, 4.5 A, 600 V Enhancement Mode, 3-Pin TO-220F FDPF6N60ZUT
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 16.07mm |
| Length | 10.36mm |
| Model | FDPF6N60ZUT |
| Width | 4.9mm |
| Mount Type | Through Hole |
| Series | UniFET |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220F |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 4.5A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 2Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 33.8W |
| Typical Gate Charge Qg @ Vgs | 14.5nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.6V |
Key Features
- Features a low on-state resistance of 2 ohms for efficient switching.
- Supports maximum continuous drain current of 4.5 amperes.
- Maximum drain-source voltage rating of 600 volts ensures high voltage handling capability.
- Enhancement mode operation with a maximum gate-source voltage of -30 to +30 volts.
- Package type TO-220F suitable for reliable through-hole mounting applications.
- Designed for robust power dissipation of up to 33.8 watts.
- Wide operating temperature range from -55°C to 150°C for demanding environments.
- Typical gate charge of 14.5 nanocoulombs enables fast switching times.
Product Description
onsemi FDPF6N60ZUT is a UniFET™ N-Channel MOSFET designed for high voltage and current applications. It features a maximum continuous drain current rating of 4.5 A and a drain-source voltage of 600 V, housed in a TO-220F 3-pin package suitable for through-hole mount.
The MOSFET exhibits very low on-state resistance of 2 ohms which ensures minimal conduction losses and superior switching performance. It operates in enhancement mode with a maximum gate-source voltage rating between -30 V and +30 V, allowing for robust gate control.
This MOSFET offers a maximum power dissipation of 33.8 W and can operate across a wide temperature range from -55°C up to 150°C, making it suitable for harsh industrial and commercial environments. The typical gate charge of 14.5 nC aids in achieving fast switching speed necessary for power conversion applications.
Designed with an internal gate-source ESD diode, this device can tolerate surge stresses exceeding 2000 V HBM, enhancing reliability in protective switching circuits.
The UniFET™ MOSFET series by Fairchild Semiconductor (now under onsemi) is well-suited for power factor correction (PFC), flat panel display (FPD) TV power supplies, ATX power supplies, and electronic lamp ballasts. The 3-pin TO-220F housing ensures easy mounting and thermal management in power electronics.
Low on-state resistance minimizes power losses. Wide voltage and current ratings for versatile applications. Robust temperature tolerance ensures reliability in industrial settings. High avalanche energy strength supports high surge conditions.
RoHS compliance for environmental safety.
This product is ideally used in industrial, electronic manufacturing, power supply and energy sectors. It provides reliable performance for designers focusing on switching power converters and related applications.
Explore the Electronics & Electricals category at EnvMart for compatible semiconductors, MOSFETs, and discrete components.
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Frequently Asked Questions
The maximum continuous drain current for this model is 4.5 amperes.
It has a maximum drain-source voltage rating of 600 volts, ensuring high voltage handling capability.
The on-state resistance is 2 ohms, which contributes to efficient switching performance.
The typical gate charge is 14.5 nanocoulombs, enabling fast switching times.
It can dissipate a maximum power of 33.8 watts, suitable for robust applications.
The dimensions are 16.07 mm in height, 10.36 mm in length, and 4.9 mm in width.
The operating temperature range is from -55°C to 150°C, making it suitable for demanding environments.
This model supports through-hole mounting, which is suitable for reliable applications.
The maximum gate-source voltage is rated between -30 volts and +30 volts.
It is designed for applications such as power factor correction, flat panel display power supplies, and electronic lamp ballasts.
Yes, this product is RoHS compliant, ensuring it meets environmental safety standards.
It belongs to the UniFET series by onsemi, designed for high voltage and current applications.
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