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ROHM N-Channel MOSFET 22 A 1200 V Enhancement Mode 3-Pin TO-247N SCT2160KEHRC11
Specifications
| Country of Origin | India |
|---|---|
| Brand | ROHM |
| Model | SCT2160KEHRC11 |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247N |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 22A |
| Maximum Drain Source Voltage Vds | 1200V |
| Maximum Drain Source Resistance Rds | 160mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 165W |
| Typical Gate Charge Qg @ Vgs | 62nC |
| Maximum Gate Source Voltage Vgs | 22V |
| Forward Voltage Vf | 4.1V |
Key Features
- Enhancement mode channel with low on-state resistance.
- Fast switching speed suitable for power applications.
- Maximum power dissipation of 165W ensures robust performance.
- Wide operating temperature range from -55°C to 150°C.
- Typical gate charge of 62nC for efficient switching.
- ROHS compliant with Pb-free lead plating.
- Designed for solar inverters, DC/DC converters, induction heating, and motor drives.
- Through hole mount type providing reliable PCB mounting.
Product Description
The ROHM SCT2160KEHRC11 is a high-performance N-Channel MOSFET designed for demanding power electronics applications. Featuring a maximum continuous drain current of 22 A and a maximum drain source voltage of 1200 V, this device offers robust electrical characteristics in a standard 3-Pin TO-247N package. The enhancement mode channel operation combined with low drain source resistance (160mΩ) contributes to efficient conduction and reduced power losses.
This MOSFET supports fast switching speeds with a typical gate charge of 62nC at Vgs, making it ideal for use in solar inverters, DC/DC converters, induction heating systems, and motor drive applications. Its high maximum power dissipation of 165 W and extended temperature range (-55°C to 150°C) ensure reliable operation under harsh industrial conditions. The device is lead-free with Pb-free lead plating and complies with RoHS regulations, supporting environmentally responsible manufacturing.
The SCT2160KEHRC11 incorporates a forward voltage of 4.1 V and a maximum gate source voltage of 22 V, enabling flexible gate drive designs. Its through-hole mounting facilitates easy and secure installation on printed circuit boards. This product is well-suited for industrial, renewable energy, and commercial power management systems requiring high-voltage and high-current switching components.
Enhancement mode N-Channel MOSFET delivering high power performance. Low Rds(on) of 160mΩ reduces conduction losses and improves efficiency. Thermally robust with a maximum operating temperature of 150°C. Compliance with RoHS and lead-free plating ensures environmental safety.
Ideal for solar, motor control, and power conversion applications. Explore more ROHM semiconductor and MOSFET products on EnvMart for advanced electronic component solutions.
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Frequently Asked Questions
The maximum continuous drain current for the SCT2160KEHRC11 is 22 A.
This model has a maximum drain source voltage of 1200 V.
It can handle a maximum power dissipation of 165 W.
The typical gate charge at Vgs is 62 nC.
The operating temperature range is from -55°C to 150°C.
This MOSFET uses a through-hole mounting type for installation.
The package type is TO-247N.
This device features an N-channel type.
The maximum gate source voltage is 22 V.
It is suitable for applications such as solar inverters, DC/DC converters, induction heating, and motor drives.
The forward voltage is 4.1 V.
The maximum drain source resistance is 160 mΩ.
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