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onsemi UniFET N-Channel MOSFET 16 A 200 V Enhancement Mode Surface Mount 3-Pin TO-252 FDD18N20LZ
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 2.39mm |
| Length | 6.73mm |
| Model | FDD18N20LZ |
| Width | 6.22mm |
| Mount Type | Surface |
| Series | UniFET |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 16A |
| Maximum Drain Source Voltage Vds | 200V |
| Maximum Drain Source Resistance Rds | 130mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 89W |
| Typical Gate Charge Qg @ Vgs | 30nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.4V |
Key Features
- UniFET technology provides the smallest on-state resistance among planar MOSFETs.
- High switching performance ensures efficient power conversion.
- Supports a maximum continuous drain current of 16 A and voltage of 200 V.
- Surface mountable in a 3-pin TO-252 package for compact PCB assembly.
- Low gate charge of 30 nC enables fast switching with reduced losses.
- Can operate from -55°C up to a maximum temperature of 150°C.
- Includes internal gate-source ESD diode supporting over 2000V HBM surge stress.
- Maximum power dissipation of 89 W supports robust thermal handling.
Product Description
onsemi FDD18N20LZ UniFET N-Channel MOSFET is a high-performance enhancement mode transistor designed for robust power switching and control applications. This device features UniFET technology, delivering one of the smallest on-state resistances available among planar MOSFETs, which contributes to reduced conduction losses and improved efficiency.
With a maximum continuous drain current rating of 16 A and a maximum drain-source voltage of 200 V, this MOSFET suits demanding power converter circuits, flat panel display (FPD) TV power supplies, Advanced Technology eXtended (ATX) power supplies, and electronic lamp ballast applications.
The 3-pin TO-252 surface mount package offers a compact footprint suitable for high-density PCB layouts. The device's maximum power dissipation of 89 W facilitates efficient thermal management during high-power operation.
Designed to withstand harsh electrical stresses, the internal gate-source ESD diode enables the MOSFET to handle over 2000 V human body model (HBM) surge stress, improving device reliability.
With an operating temperature range from -55°C to 150°C and a low typical gate charge of 30 nC, the FDD18N20LZ supports fast switching speeds while maintaining thermal stability.
This MOSFET is particularly suitable for various industrial environments including manufacturing equipment, HVAC systems, automotive electronics (non-automotive certified), and power supplies requiring stable and efficient switching components.
UniFET technology ensures minimal on-state resistance for high efficiency. Supports continuous drain current up to 16 A. High voltage rating of 200 V suitable for power switching applications. Compact TO-252 package allows surface mounting with 3 pins.
Low typical gate charge enhances switching speed and performance. Wide operating temperature range from -55°C to 150°C. Internal gate-source ESD diode for surge protection. Maximum power dissipation of 89 W supports heavy loads.
Typical forward voltage of 1.4 V for efficient conduction. Ideal for switching power converters, PFC, and lamp ballasts. Explore EnvMart's extensive selection of semiconductor components for efficient and reliable electronic designs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 16 A.
It supports a maximum drain-source voltage of 200 V.
This unit comes in a 3-pin TO-252 surface mount package.
The typical gate charge is 30 nC, which allows for fast switching speeds.
It can operate within a temperature range from -55°C to 150°C.
The maximum power dissipation is 89 W, supporting robust thermal handling.
The typical forward voltage is 1.4 V, which aids in efficient conduction.
The height is 2.39 mm and the width is 6.22 mm.
This model features an N-channel type.
It includes an internal gate-source ESD diode that can handle over 2000 V HBM surge stress.
It is suitable for power converter circuits, flat panel display TV power supplies, and electronic lamp ballast applications.
The maximum gate-source voltage is -20 V to +20 V.
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