onsemi PowerTrench N-Channel MOSFET 130 A 80 V Enhancement Mode 8-Pin WDFN FDMS86350

onsemi FDMS86350 is a PowerTrench® N-Channel MOSFET tailored for demanding power semiconductor applications requiring high current handling and efficiency.

This device supports a maximum continuous drain current of 130 A and a maximum drain to source voltage (Vds) of 80 V, making it suitable for high-current switching and load management tasks in industrial and electronic power control systems.

Featuring an 8-pin WDFN surface mount package, the MOSFET combines compact size with performance, measuring 5.1mm in length, 6.25mm in width, and 1.05mm in height. This form factor ensures easy installation on printed circuit boards while maintaining excellent thermal management.

The device operates in enhancement mode with a maximum drain-source resistance (Rds) of 3.8 milliohms, minimizing power losses and improving energy efficiency in switching scenarios. It has a maximum power dissipation rating of 156 watts, supporting demanding power loads under continuous operation.

The FDMS86350 MOSFET is characterized by a typical gate charge (Qg) of 110 nanocoulombs at Vgs = 10V, ensuring quick transistor switching and reducing switching losses. It withstands gate-source voltages up to ±20 V and has a forward voltage (Vf) of 1.2 V.

Designed to operate reliably between -55°C and 150°C, this component is ideal for industrial electronics, power supply regulation, motor drives, and other high-performance applications where robustness and compactness are critical.

While it lacks specific automotive certifications, its PowerTrench technology ensures reliable operation in demanding commercial and industrial environments. The FDMS86350 is suitable for engineers and designers seeking a compact, high-current N-channel MOSFET with excellent conduction properties and efficient thermal performance.

Operates with a maximum continuous drain current of 130 amperes. Rated for a maximum drain source voltage of 80 volts ensuring robust voltage handling. Features an 8-pin WDFN surface mount package for efficient PCB integration.

Employs enhancement mode operation for reliable switching functionality. Maximum drain source resistance is a low 3.8 milliohms, optimizing conduction efficiency. Supports a maximum power dissipation of 156 watts for high-power applications.

Operates across a temperature range from -55°C minimum to 150°C maximum. Compact dimensions with a length of 5.1mm, width of 6.25mm, and height of 1.05mm. Includes typical gate charge of 110 nanocoulombs, capable of fast switching speeds.

Designed without automotive certification and standard approvals. Explore the extensive category of MOSFETs on EnvMart for compatible components and reliable industrial semiconductor solutions.