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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 5.3mm |
| Length | 20.8mm |
| Model | NGTB35N65FL2WG |
| Width | 16.25mm |
| Mount Type | Through Hole |
| Series | Field Stop |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 70A |
| Maximum Collector Emitter Voltage Vceo | 650V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.7V |
| Channel Type | N |
| Maximum Power Dissipation Pd | 300W |
| Maximum Gate Emitter Voltage VGEO | 20 V |
onsemi NGTB35N65FL2WG is a N-Channel IGBT-Field Stop II power semiconductor device designed for high efficiency and fast switching in industrial, motor drive, and power management applications.
This IGBT offers a maximum continuous collector current of 70A and a maximum collector-emitter voltage rating of 650V, making it suitable for high current switching tasks. It features a maximum power dissipation of 300W and supports switching frequencies up to 1MHz, ensuring excellent performance in demanding electronic circuits.
The device comes in a through-hole 3-pin TO-247 package with dimensions 20.8mm (length) x 16.25mm (width) x 5.3mm (height), providing reliable mounting and thermal management. It operates over a wide temperature range from -55°C to 175°C, enabling usage in harsh industrial environments.
The maximum gate-emitter voltage is rated at 20V, allowing precise and reliable gate control. This transistor integrates the benefits of MOSFET gate-drive characteristics with bipolar transistor power capabilities, making it ideal for motor drive controllers and other power switching circuits.
High efficiency insulated gate bipolar transistor suitable for motor drives and power electronics. 70A continuous collector current and 650V voltage rating for demanding workloads. Compact 3-Pin TO-247 through-hole package for robust mounting options.
Wide operating temperature range from -55°C to 175°C ensuring ruggedness. Switching speed up to 1MHz for fast response applications. RoHS compliant for environmentally responsible manufacturing. Designed for efficient power dissipation up to 300W to maintain thermal stability.
Ideal for use in industrial power control, renewable energy inverters, motor drives, and high power switching applications. onsemi NGTB35N65FL2WG provides reliable and efficient performance for engineers designing power electronics systems.
Explore EnvMart’s extensive category of IGBTs to find advanced semiconductor components built for industrial strength and efficiency.
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