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Infineon HEXFET N-Channel MOSFET 33A 100V Enhancement Mode Surface Mount TO-263 3-Pin IRF540NSTRLPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 4.83mm |
| Length | 10.67mm |
| Model | IRF540NSTRLPBF |
| Width | 9.65mm |
| Mount Type | Surface |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 33A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 44mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 130W |
| Typical Gate Charge Qg @ Vgs | 71nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.2V |
Key Features
- This MOSFET features a low on-resistance of 44mΩ, boosting circuit efficiency.
- Supports high power dissipation up to 130W for robust operation.
- Operates over a wide temperature range from -55°C to 175°C for versatile use.
- Enhancement mode operation enables superior performance in switching circuits.
- Designed with surface mount TO-263 package for easy PCB integration.
- Maximum gate-to-source voltage is ±20 V enabling safe switching control.
- Typical gate charge of 71nC at 10 V allows fast switching speeds.
- Forward voltage drop is only 1.2 V reducing conduction losses.
Product Description
Infineon IRF540NSTRLPBF is a high-power HEXFET N-Channel MOSFET designed for efficient and reliable performance in power electronics applications. Its 33 A maximum continuous drain current and 100 V drain-source voltage ratings make it suitable for a broad range of industrial and commercial uses.
Built in a 3-pin TO-263 surface mount package, this device offers ease of integration with modern printed circuit boards, providing a compact solution for power switching and management.
The enhancement mode channel mode gives users precise control for switching applications, while a low on-resistance of 44mΩ significantly reduces power losses, improving overall circuit efficiency.
With a maximum power dissipation capability of 130 W, the MOSFET can operate reliably under high load conditions. Its wide operating temperature range from -55°C to +175°C ensures durability in harsh environments common in industrial automation, motor control, renewable energy inverters, and high-efficiency power supplies.
The maximum gate-to-source voltage of ±20 V ensures the device operates safely within typical gate drive voltages, and the typical gate charge value of 71 nC enables fast switching, minimizing switching losses.
Additional features include a forward voltage drop of 1.2 V and a robust package size (10.67 mm length, 9.65 mm width, 4.83 mm height) that supports thermal management and reliability.
Low Rds(on) of 44 mΩ for improved efficiency. High power dissipation of 130 W enables robust use. Wide temperature range from -55°C to 175°C suits industrial environments. Enhancement mode channel ensures reliable switching operation.
Surface mount TO-263 package for easy PCB integration. ±20 V maximum gate-to-source voltage for safe operation. 71 nC typical gate charge at 10 V for fast switching. Compact physical dimensions aid heat dissipation.
This MOSFET is ideal for applications in industrial power management, motor control systems, high-efficiency power supplies, and renewable energy solutions, providing trustworthy performance and energy efficiency. Explore a wide range of semiconductor solutions from Infineon at EnvMart to empower your projects and systems.
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Frequently Asked Questions
The maximum continuous drain current of this model is 33 A.
This MOSFET has a maximum drain-source voltage rating of 100 V.
The on-resistance (Rds(on)) of this model is 44 mΩ, which helps improve circuit efficiency.
It operates over a wide temperature range from -55°C to +175°C.
The typical gate charge at 10 V for this MOSFET is 71 nC.
This model is designed in a TO-263 surface mount package, facilitating easy PCB integration.
The maximum power dissipation capability of this MOSFET is 130 W.
The forward voltage drop is 1.2 V, which helps reduce conduction losses.
It is suitable for applications in industrial power management, motor control systems, high-efficiency power supplies, and renewable energy solutions.
The maximum gate-to-source voltage for this MOSFET is ±20 V, ensuring safe operation.
The TO-263 package of this model has 3 pins.
This MOSFET features an N-channel type, which is suitable for enhancement mode operation.
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