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Infineon HEXFET N-Channel MOSFET, 43 A, 200 V, Enhancement Mode, 3-Pin TO-220 IRFB38N20DPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 16.51mm |
| Length | 10.67mm |
| Model | IRFB38N20DPBF |
| Width | 4.69mm |
| Mount Type | Through Hole |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 43A |
| Maximum Drain Source Voltage Vds | 200V |
| Maximum Drain Source Resistance Rds | 54mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 300W |
| Typical Gate Charge Qg @ Vgs | 60nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.5V |
| Infineon HEXFET N-Channel MOSFET, 44 A, 200 V, 3-Pin TO-220AB IRFB38N20DPBFBrand | Infineon |
Key Features
- Supports a maximum continuous drain current of 43A for high current applications.
- Provides a low on-resistance (Rds(on)) of 54 milliohms to minimize conduction losses.
- Capable of withstanding voltages up to 200 V between drain and source.
- Features an enhancement mode N-channel design for effective switching.
- Includes a TO-220 package with 3 pins for through-hole mounting.
- Rated for maximum power dissipation of 300W ensuring robust thermal performance.
- Operates reliably from -55°C up to 175°C for wide temperature range use.
- Designed with low gate charge (60nC) suitable for high-speed switching.
Product Description
Infineon IRFB38N20DPBF HEXFET N-Channel MOSFET is a high-performance discrete semiconductor designed for power management and switching applications. The device supports a continuous drain current of 43A and can sustain drain-source voltages up to 200V with an enhancement mode channel.
This MOSFET is housed in a durable TO-220 package with three pins, suitable for through-hole mounting on power electronic circuits. It offers a low on-resistance of 54 milliohms, reducing energy losses significantly, and can dissipate up to 300 watts of power with appropriate thermal management.
The device operates over a broad temperature range (-55°C to 175°C), making it suitable for demanding industrial and electronic environments. It features a typical gate charge of 60 nanocoulombs, allowing for high-speed switching performance ideal for DC-DC converters and power supplies.
Applications include high-frequency power converters, plasma display panel drivers, industrial automation systems requiring consistent switching, and power supplies where thermal efficiency is critical. Proper heatsinking is recommended for maintaining optimal junction temperatures during operation.
Maximum continuous drain current of 43A ensures suitability for high-power circuits. Low Rds(on) of 54mΩ minimizes conduction losses. TO-220 package facilitates reliable through-hole mounting. Wide operating temperature range supports usage in harsh environments.
Enhancement mode N-channel design enhances switch efficiency. Low typical gate charge enables efficient high-speed switching. High power dissipation (300W) capability behind effective thermal design. Compatible with DC-DC converter power management circuits.
Used in plasma display and industrial automation applications. Forward voltage drop of 1.5V optimizes energy usage. Explore more Infineon semiconductor products for industrial, laboratory, and electronic engineering applications on EnvMart for precise and reliable electronic component sourcing.
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Frequently Asked Questions
The maximum continuous drain current for this model is 43A, making it suitable for high-power applications.
It can withstand a maximum drain-source voltage of 200V, allowing for use in high-voltage applications.
The on-resistance (Rds(on)) is 54 milliohms, which helps to minimize conduction losses during operation.
This MOSFET is housed in a TO-220 package with a 3-pin configuration, suitable for through-hole mounting.
It operates reliably within a temperature range of -55°C to 175°C, making it suitable for various environmental conditions.
The typical gate charge (Qg) is 60 nanocoulombs, which enables efficient high-speed switching.
It has a maximum power dissipation capability of 300W, ensuring robust thermal performance under load.
This model is suitable for high-frequency power converters, plasma display panel drivers, and industrial automation systems.
The forward voltage drop is 1.5V, which optimizes energy usage in power management applications.
The maximum gate-source voltage (Vgs) is -30V to +30V, allowing for versatile control in switching applications.
The dimensions of the TO-220 package are 16.51mm in height, 10.67mm in length, and 4.69mm in width.
This device features an enhancement mode N-channel design, which enhances switching efficiency for power management applications.
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