Infineon HEXFET Type P-Channel MOSFET 16 A 30 V Enhancement 8-Pin SOIC IRF9317TRPBF

Infineon IRF9317TRPBF is a HEXFET Type P-Channel MOSFET designed for efficient power switching applications with a maximum drain current of 16 A and drain-source voltage of 30 V. It is encapsulated in an 8-Pin SOIC surface mount package, making it suitable for compact and high-density circuit board designs.

The device features enhancement-mode channel operation, which enhances its switching performance. Its robust electrical characteristics allow operation across a wide temperature range from -55°C to 150°C, delivering dependable performance in harsh industrial and automotive environments.

Key electrical parameters include a low maximum drain-source resistance of 10.2 mΩ, enabling low conduction losses and improved efficiency. The typical gate charge of 61 nC at gate-source voltage optimizes the switching speed, beneficial for high-frequency switching operations.

The compact physical size measuring 5 mm in length, 4 mm in width, and 1.5 mm in height supports space-saving PCB layouts. Its maximum power dissipation rating of 2.5 W suits moderate power applications in power management circuits.

Additional technical parameters such as maximum gate-source voltage rating (-20 V to +20 V) and forward voltage of -1.2 V assure device reliability and safety during operations. The MOSFET will find applications in industrial controls, power regulation, automotive electronics, telecommunications, and consumer electronics where high performance and compact design are critical.

Features HEXFET technology ensuring low on-resistance for high efficiency. Supports an enhancement-type channel mode ideal for switching applications. Maximum power dissipation of 2.5 W suitable for moderate power designs.

Operates at temperatures ranging from -55°C to 150°C ensuring robust performance. Compact dimensions with 5 mm length, 4 mm width, and 1.5 mm height for space-constrained PCB layouts. Typical gate charge of 61 nC at gate-source voltage enhances fast switching capabilities.

Includes protective maximum gate-source voltage ratings of -20 V to +20 V. Widely used in industrial, automotive, and consumer electronic circuits requiring reliable P-channel MOSFET. Surface mount package type (SOIC) for automated assembly processes.

Forward voltage of -1.2 V ensuring low voltage drop during conduction. Choose from EnvMart's Electronics & Electricals category for high-quality MOSFET components suitable for discrete semiconductor applications.