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Vishay SQ Rugged Type P-Channel MOSFET, 17 A Continuous Drain Current, 40 V Drain Source Voltage SQ4401EY-T1_GE3
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 1.55mm |
| Length | 5mm |
| Model | SQ4401EY-T1_GE3 |
| Width | 4mm |
| Mount Type | Surface |
| Series | SQ Rugged |
| Maximum Operating Temperature | 175°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 17A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 24mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 7.14W |
| Typical Gate Charge Qg @ Vgs | 74nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.1V |
Key Features
- The MOSFET features an 8-pin SOIC package ensuring easy surface mount integration.
- It operates in enhancement mode tailored for efficient switching.
- The device supports a maximum power dissipation of 7.14 W for reliable performance.
- It accommodates an operating temperature range from -55°C to 175°C suitable for diverse environments.
- Maximum drain-source resistance is 24 mΩ, enhancing conductivity.
- The gate charge is 74 nC at the typical gate voltage, ensuring fast switching speeds.
- Maximum gate-source voltage ±20 V allows for versatile control signal compatibility.
- The MOSFET complies with the automotive standard AEC-Q101, making it suitable for automotive electronics.
Product Description
Vishay SQ4401EY-T1_GE3 is a rugged P-Channel enhancement mode MOSFET designed for high-performance discrete semiconductor applications. Configured in an 8-pin SOIC package, this MOSFET supports a continuous drain current of 17 A and a maximum drain-source voltage of 40 V.
With a maximum power dissipation of 7.14 W, this device operates reliably across a wide temperature range from -55°C to 175°C, making it suitable for demanding industrial, automotive, and power management applications. The low Drain Source Resistance of 24 mΩ ensures minimal conduction losses, contributing to efficient power handling.
The typical gate charge of 74 nC at standard gate voltage contributes to fast switching capabilities, while the maximum gate-source voltage rating of ±20 V provides flexibility for various driving circuits. Its compliance with AEC-Q101 automotive standards positions it ideally for use in automotive electronic systems where durability and reliability are critical.
Dimensions including 1.55 mm height, 5 mm length, and 4 mm width provide a compact form factor facilitating integration into densely populated printed circuit boards. The device is well suited for industrial, automotive, power supply, battery management, and switching regulator designs.
Vishay's SQ4401EY-T1_GE3 MOSFET offers performance and reliability in power switching and amplification roles for a wide array of semiconductor and electronic component needs. The MOSFET features an 8-pin SOIC package ensuring easy surface mount integration.
It operates in enhancement mode tailored for efficient switching. The device supports a maximum power dissipation of 7.14 W for reliable performance. It accommodates an operating temperature range from -55°C to 175°C suitable for diverse environments.
Maximum drain-source resistance is 24 mΩ, enhancing conductivity. The gate charge is 74 nC at the typical gate voltage, ensuring fast switching speeds. Maximum gate-source voltage ±20 V allows for versatile control signal compatibility.
The MOSFET complies with the automotive standard AEC-Q101, making it suitable for automotive electronics. Compact dimensions include a height of 1.55 mm, length of 5 mm, and width of 4 mm. Forward voltage drop is low at -1.1 V, improving circuit efficiency.
Explore Vishay Semiconductor components and MOSFETs at EnvMart for detailed technical specifications and reliable sourcing.
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Frequently Asked Questions
The maximum continuous drain current for this model is 17 A.
This MOSFET supports a maximum drain-source voltage of 40 V.
It operates within a temperature range from -55°C to 175°C.
The device can dissipate a maximum power of 7.14 W.
The typical gate charge is 74 nC at the standard gate voltage.
The dimensions are 1.55 mm in height, 5 mm in length, and 4 mm in width.
The maximum gate-source voltage is ±20 V.
The maximum drain-source resistance is 24 mΩ.
It comes in an 8-pin SOIC package, suitable for surface mount integration.
Yes, it complies with the automotive standard AEC-Q101.
This model features a P-Channel type configuration.
The forward voltage drop is low at -1.1 V.
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