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Vishay SQ Rugged Type P-Channel MOSFET 6.2 A, 30 V Enhancement Mode, 8-Pin SOIC SQ4431EY-T1_GE3
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 1.55mm |
| Length | 5mm |
| Model | SQ4431EY-T1_GE3 |
| Width | 4mm |
| Mount Type | Surface |
| Series | SQ Rugged |
| Maximum Operating Temperature | 175°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 6.2A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 52mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 6W |
| Typical Gate Charge Qg @ Vgs | 25nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.1V |
Key Features
- Max continuous drain current of 6.2 amps for reliable performance.
- Drain-source voltage rating of 30 volts for wide application range.
- Enhancement mode device with rugged SQ Rugged series design.
- Surface mount SOIC package with 8 pins for compact PCB integration.
- Maximum power dissipation of 6 watts for efficient thermal handling.
- Operational temperature range from minus 55°C to 175°C to support harsh environments.
- Compliant with automotive standard AEC-Q101 enhancing reliability in automotive applications.
- Typical gate charge of 25 nanocoulombs for efficient switching.
Product Description
Vishay SQ4431EY-T1_GE3 is a rugged P-Channel MOSFET transistor from the SQ Rugged series, designed for durability and robust performance in demanding electronic circuits.
This 8-pin SOIC packaged device supports a maximum continuous drain current of 6.2 amperes and a drain-source voltage rating of 30 volts, making it suitable for a wide range of power and switching applications.
Engineered with enhancement mode channel operation, the MOSFET features a maximum power dissipation of 6 watts allowing efficient heat management in surface-mounted configurations.
The device operates reliably across a wide temperature spectrum, from -55 degrees Celsius up to 175 degrees Celsius, which allows deployment in industrial, automotive, and harsh environmental conditions.
Additional key specs include a typical gate charge of 25 nanocoulombs and a maximum gate-source voltage of negative 20 to positive 20 volts, ensuring stable switching characteristics and control.
Vishay SQ4431EY-T1_GE3 is compliant with the automotive standard AEC-Q101, certifying its quality and durability for automotive electronic applications.
This MOSFET is ideal for use in industrial controls, automotive electronics, power management circuits, and manufacturing equipment requiring reliable semiconductor discrete components.
Max continuous drain current of 6.2 amps for reliable performance. Drain-source voltage rating of 30 volts for wide application range. Enhancement mode device with rugged SQ Rugged series design. Surface mount SOIC package with 8 pins for compact PCB integration.
Maximum power dissipation of 6 watts for efficient thermal handling. Operational temperature range from minus 55°C to 175°C to support harsh environments. Compliant with automotive standard AEC-Q101 enhancing reliability in automotive applications.
Typical gate charge of 25 nanocoulombs for efficient switching. Maximum gate-source voltage of ±20 volts ensuring operational stability. Dimension specifications: 5 mm length, 4 mm width, and 1.55 mm height. Explore more discrete semiconductor solutions and MOSFET variants at EnvMart for your diverse industrial and electronic component needs.
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Frequently Asked Questions
The maximum continuous drain current of the Vishay SQ4431EY-T1_GE3 is 6.2 amperes.
This model has a drain-source voltage rating of 30 volts, allowing for a wide range of applications.
It operates reliably within a temperature range from -55°C to 175°C, suitable for harsh environments.
The Vishay SQ4431EY-T1_GE3 is packaged in an 8-pin SOIC format for surface mounting.
The maximum power dissipation for this device is 6 watts, allowing for efficient thermal handling.
The typical gate charge for this MOSFET is 25 nanocoulombs, which contributes to its efficient switching characteristics.
This MOSFET is compliant with the automotive standard AEC-Q101, enhancing its reliability for automotive applications.
The dimensions of this model are 5 mm in length, 4 mm in width, and 1.55 mm in height.
The maximum gate-source voltage for this device is ±20 volts, ensuring operational stability.
The Vishay SQ4431EY-T1_GE3 utilizes a P-Channel type channel with enhancement mode operation.
The maximum drain-source resistance for this MOSFET is 52 milliohms, which supports efficient operation.
This MOSFET is suitable for applications in industrial controls, automotive electronics, and power management circuits.
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