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Vishay SQ Rugged Type P-Channel MOSFET 17 A 40 V Enhancement 8-Pin SOIC SQ4401EY-T1_GE3
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 1.55mm |
| Length | 5mm |
| Model | SQ4401EY-T1_GE3 |
| Width | 4mm |
| Mount Type | Surface |
| Series | SQ Rugged |
| Maximum Operating Temperature | 175°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 17A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 24mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 7.14W |
| Typical Gate Charge Qg @ Vgs | 74nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.1V |
Key Features
- The device operates in enhancement channel mode with a low maximum drain-source resistance of 24 mΩ.
- It supports a maximum power dissipation of 7.14 W for sustained performance.
- Designed to operate across a wide temperature range from -55°C to 175°C.
- Typical gate charge is 74 nC at the specified gate-source voltage.
- Complies with Automotive Standard AEC-Q101 for reliability in automotive applications.
- Supplied in a surface-mount SOIC package ideal for automated PCB assembly.
- Typical forward voltage is -1.1 V, suitable for efficient power management tasks.
Product Description
Vishay SQ4401EY-T1_GE3 is a SQ Rugged series P-Channel MOSFET transistor designed for industrial and automotive applications requiring reliable semiconductor switching components. This enhancement mode MOSFET has a maximum continuous drain current of 17 A and a maximum drain-source voltage of 40 V, making it suitable for medium power electronic circuit applications.
The device’s robust design supports operation from a minimum temperature of -55°C up to a maximum of 175°C and meets the automotive quality standard AEC-Q101 for enhanced reliability under harsh conditions. Its surface-mount 8-pin SOIC package allows for efficient automated mounting and compact circuit layout.
Key electrical parameters include a low maximum drain-source resistance of 24 mΩ which reduces power loss and heat generation, a typical gate charge of 74 nC indicative of fast switching capabilities, and a maximum power dissipation of 7.14 W ensuring stable operation under load.
The MOSFET is engineered with a typical forward voltage of -1.1 V, ensuring effective conduction in power management and switching circuits. Its physical footprint of 5 mm length by 4 mm width with a height of 1.55 mm optimizes board space without compromising performance.
Rugged P-Channel enhancement mode MOSFET for reliable switching. Maximum continuous drain current of 17 A and 40 V drain-source voltage rating. Automotive AEC-Q101 compliance for harsh environment applications. Surface mount SOIC package with 8 pins for compact PCB design.
Wide operating temperature range from -55°C to 175°C. Low drain-source resistance of 24 mΩ to minimize conduction losses. Maximum power dissipation of 7.14 W ensures durability. Typical gate charge of 74 nC supports fast switching.
Typical forward voltage of -1.1 V facilitates efficient circuit operation.
This MOSFET is well-suited for industrial power controllers, automotive electronics, and other high-reliability semiconductor applications where efficiency and robustness are critical. The package and ratings support modern surface-mount manufacturing processes for scalable production.
Explore Vishay's portfolio of semiconductor components on EnvMart for comprehensive solutions in electronic power management and switching.
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Frequently Asked Questions
The maximum continuous drain current for this model is 17 A.
This MOSFET has a maximum drain-source voltage rating of 40 V.
It operates across a wide temperature range from -55°C to 175°C.
The maximum power dissipation is 7.14 W, ensuring stable operation under load.
The typical gate charge is 74 nC at the specified gate-source voltage.
It is supplied in a surface-mount SOIC package with 8 pins.
The maximum drain-source resistance is 24 mΩ, which helps to minimize power loss.
It complies with Automotive Standard AEC-Q101 for reliability in automotive applications.
The typical forward voltage is -1.1 V, suitable for efficient power management tasks.
The dimensions are 5 mm in length, 4 mm in width, and 1.55 mm in height.
This model uses a P-Channel enhancement mode.
The maximum gate-source voltage is -20 V to +20 V.
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